HGTG10N120BND

Power - Max:	298W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	70ns
Test Condition:	960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C:	23ns/165ns
Gate Charge:	100nC
Input Type:	Standard
Switching Energy:	850µJ (on), 800µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 10A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	35A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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.HGTG10N120BND Application Field and Working PrincipleThe HGTG10N120BND is an IGBT transistor that is employed in various different applications. An IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor that combines the characteristics of a normal bipolar junction transistor (BJT) and an insulated gate field effect transistor (IGFET) into one transformer. It is mainly used as a switch with high current carrying capacity and low switching losses. This makes it suitable across a range of applications including motor control, power conversion, and high frequency switching. The HGTG10N120BND is a single/die IGBT, meaning that it is constructed using a single silicon crystal device. It has a maximum sustained voltage of 1200V and a collector current of 10A. It also has a very low on-state conduction losses and is capable of switching even at very high frequencies. The maximum junction temperature for this device is 175°C, and it can operate in temperatures ranging from -40°C to 150°C. An IGBT utilizes two junction junctions that make it possible for it to conduct electricity in either direction. One side of the cycle is the Emitter-Base junction, which is made up of a p-type and an n-type material. This allows the current to flow from the emitter to the base when the base-emitter voltage is positive. The other junction is the Collector-Base junction, which is constructed of an n-type material and a p-type material. This junction allows current to flow from the collector to the base as long as the voltage is high. When the base-emitter voltage is high and the collector-base voltage is also high, both junctions are forward biased, allowing current to flow through the device. This is known as the on-state. When the collector-base voltage is low, the junction is reverse biased, and current does not flow through the device. This is known as the off-state. The IGBT also contains two MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). These two MOSFETs are called the high-side and low-side MOSFETs, and they are responsible for controlling the gates of the two junctions. The gates are semiconductor devices responsible for controlling the flow of current and voltage levels in the device. By controlling the gate voltage, the device can be switched between the on and off states. The HGTG10N120BND is suitable for a range of applications, including motor control, inverters, high frequency switching, and power supplies. It has a fast switching time and low conduction losses, making it an ideal choice for high-speed and high-power applications. It is also able to operate over a wide temperature range and can be used in high-temperature environments. Finally, it has a high maximum sustained voltage and can withstand high surge voltages. In summary, the HGTG10N120BND is a single/die IGBT transistor with a maximum sustained voltage of 1200V and a collector current of 10A. It is suitable for applications including motor control, inverters, high frequency switching, and power supplies. It has a fast switching time and low conduction losses, making it an ideal choice for high-speed and high-power applications. It is also able to operate over a wide temperature range and can be used in high-temperature environments.

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