HGTG11N120CND

Power - Max:	298W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	70ns
Test Condition:	960V, 11A, 10 Ohm, 15V
Td (on/off) @ 25°C:	23ns/180ns
Gate Charge:	100nC
Input Type:	Standard
Switching Energy:	950µJ (on), 1.3mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 11A
Current - Collector Pulsed (Icm):	80A
Current - Collector (Ic) (Max):	43A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IGBT Application Field and Working Principle - Single Transistors

An Insulated-Gate Bipolar Transistor, also called IGBT, is a component used to control the power circuits and current in both digital devices and electric motors. It is a type of power transistor that combines high control and efficient power handling. Due to their fast switching speed and low gate voltage, IGBTs have been widely used in the field of digital systems, automotive and industrial applications.

Application Field and Working Principle of HGTG11N120CND

The HGTG11N120CND IGBT is a type of power transistor with three terminals and high switching speed. It has a junction temperature range of -40 to 125°C and a high current rating of 11A, making it suitable for many advanced applications. This IGBT is mainly used for switching and control applications, like controlling motor speed and activating relays. To understand how an IGBT works, let us start with a basic diagram. The IGBT has two main elements: the collector and the emitter, connected by an insulated gate. The collector is made up of P-type semiconductor material, while the emitter is made of N-type. Under normal conditions, the gate is kept off and the collector and emitter remain isolated.When a voltage is applied to the insulated gate, it induces an electric field that attracts the N-type semiconductor material in the emitter to the P-type material in the collector. This results in an electrical current flowing between the emitter and the collector, and the IGBT is said to be "on". Conversely, when the voltage is removed, the electric current stops and the IGBT is "off".The HGTG11N120CND IGBT can be used in various applications and delivers very high performance. It is used in high-current applications such as AC drives, three-phase inverters and motor drives. It also offers improved thermal performance as compared to conventional BJT transistors, and allows for higher peak currents.IGBTs are superior to BJT transistors due to their high switching speed, low switching loss and susceptibility to low voltage. They also transfer much current through a low voltage application, making them more energy efficient.

Conclusion

The HGTG11N120CND IGBT transistor is a useful component for digital systems, automotive and industrial applications. It is a type of power transistor with fast switching speed and low gate voltage. It offers a wide range of applications including controlling motor speed and activating relays. It is superior to BJT transistors due to its high switching speed, low switching loss and susceptibility to low voltage.

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