HGTG20N60B3D Allicdata Electronics

HGTG20N60B3D Discrete Semiconductor Products

Allicdata Part #:

HGTG20N60B3DFS-ND

Manufacturer Part#:

HGTG20N60B3D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 40A 165W TO247
More Detail: IGBT 600V 40A 165W Through Hole TO-247
DataSheet: HGTG20N60B3D datasheetHGTG20N60B3D Datasheet/PDF
Quantity: 472
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 472Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 165W
Switching Energy: 475µJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: --
Test Condition: --
Reverse Recovery Time (trr): 55ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Part Number: HGTG20N60
Description

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The HGTG20N60B3D is a type of Insulated Gate Bipolar Transistor (IGBT) and is categorized as a single transistor. An IGBT is a type of electronic switching device that combines the best of both MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and conventional bipolar transistors. This device ensures excellent switching performance, making it suitable for several applications.

There are several applications that utilize the HGTG20N60B3D. High-speed switching and high-efficiency power conversion in inverters for motor drives, welding, UPS, and other power electronic applications are some of its most common uses. Additionally, the versatile IGBT can also be utilized in air conditioning, induction heating and other switching applications, as well as in robotics, LED lighting, and many other devices.

The working mechanism of the IGBT can be broken down into two stages. The first stage is called the "on" state, where a small current is applied to its gate terminal. This current initiates the formation of a conducting channel between the drain and source terminals of the transistor. Consequently, the IGBT becomes switch "on". The second stage is referred to as the "off" state, where a small current is withdrawn from the gate terminal. This removes the conducting channel and the IGBT is switched "off".

Another important characteristic of these transistors is the low operating temperature. This ensures optimal functioning of the HGTG20N60B3D and allows it to be used in a wider range of electronic applications. This also leads to better overall system efficiency, reducing energy costs.

The IGBT is known to be reliable, durable and capable of withstanding high currents. Additionally, the fast switching time ensures that the HGTG20N60B3D can be easily integrated into a variety of systems. This makes it an ideal choice for several applications that require fast and efficient switching.

Overall, the HGTG20N60B3D is an extremely reliable and cost-effective transistor. Its robust design, versatile applications, and reasonable cost mean it can be used in a variety of projects with minimal expenditure. Its efficient operation and low power consumption makes the IGBT an attractive choice for many modern applications.

The specific data is subject to PDF, and the above content is for reference

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