HGTG20N60B3D Discrete Semiconductor Products |
|
Allicdata Part #: | HGTG20N60B3DFS-ND |
Manufacturer Part#: |
HGTG20N60B3D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 40A 165W TO247 |
More Detail: | IGBT 600V 40A 165W Through Hole TO-247 |
DataSheet: | HGTG20N60B3D Datasheet/PDF |
Quantity: | 472 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 20A |
Power - Max: | 165W |
Switching Energy: | 475µJ (on), 1.05mJ (off) |
Input Type: | Standard |
Gate Charge: | 80nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Reverse Recovery Time (trr): | 55ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Base Part Number: | HGTG20N60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HGTG20N60B3D is a type of Insulated Gate Bipolar Transistor (IGBT) and is categorized as a single transistor. An IGBT is a type of electronic switching device that combines the best of both MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and conventional bipolar transistors. This device ensures excellent switching performance, making it suitable for several applications.
There are several applications that utilize the HGTG20N60B3D. High-speed switching and high-efficiency power conversion in inverters for motor drives, welding, UPS, and other power electronic applications are some of its most common uses. Additionally, the versatile IGBT can also be utilized in air conditioning, induction heating and other switching applications, as well as in robotics, LED lighting, and many other devices.
The working mechanism of the IGBT can be broken down into two stages. The first stage is called the "on" state, where a small current is applied to its gate terminal. This current initiates the formation of a conducting channel between the drain and source terminals of the transistor. Consequently, the IGBT becomes switch "on". The second stage is referred to as the "off" state, where a small current is withdrawn from the gate terminal. This removes the conducting channel and the IGBT is switched "off".
Another important characteristic of these transistors is the low operating temperature. This ensures optimal functioning of the HGTG20N60B3D and allows it to be used in a wider range of electronic applications. This also leads to better overall system efficiency, reducing energy costs.
The IGBT is known to be reliable, durable and capable of withstanding high currents. Additionally, the fast switching time ensures that the HGTG20N60B3D can be easily integrated into a variety of systems. This makes it an ideal choice for several applications that require fast and efficient switching.
Overall, the HGTG20N60B3D is an extremely reliable and cost-effective transistor. Its robust design, versatile applications, and reasonable cost mean it can be used in a variety of projects with minimal expenditure. Its efficient operation and low power consumption makes the IGBT an attractive choice for many modern applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HGTG27N120BN | ON Semicondu... | -- | 1000 | IGBT 1200V 72A 500W TO247... |
HGTG18N120BN | ON Semicondu... | 4.28 $ | 1000 | IGBT 1200V 54A 390W TO247... |
HGTG40N60B3 | ON Semicondu... | -- | 1000 | IGBT 600V 70A 290W TO247I... |
HGTG40N60A4 | ON Semicondu... | -- | 1000 | IGBT 600V 75A 625W TO247I... |
HGTG12N60A4 | ON Semicondu... | -- | 1000 | IGBT 600V 54A 167W TO247I... |
HGTG7N60A4 | ON Semicondu... | -- | 1000 | IGBT 600V 34A 125W TO247I... |
HGTG20N60A4 | ON Semicondu... | -- | 359 | IGBT 600V 70A 290W TO247I... |
HGTG20N60B3D | ON Semicondu... | -- | 472 | IGBT 600V 40A 165W TO247I... |
HGTG20N60A4D | ON Semicondu... | -- | 284 | IGBT 600V 70A 290W TO247I... |
HGTG30N60B3D | ON Semicondu... | -- | 1655 | IGBT 600V 60A 208W TO247I... |
HGTG7N60A4D | ON Semicondu... | -- | 1000 | IGBT 600V 34A 125W TO247I... |
HGTG12N60A4D | ON Semicondu... | -- | 1000 | IGBT 600V 54A 167W TO247I... |
HGTG20N60B3 | ON Semicondu... | -- | 1000 | IGBT 600V 40A 165W TO247I... |
HGTG30N60B3 | ON Semicondu... | 3.6 $ | 1000 | IGBT 600V 60A 208W TO247I... |
HGTG12N60B3 | ON Semicondu... | -- | 1000 | IGBT 600V 27A 104W TO247I... |
HGTG11N120CN | ON Semicondu... | -- | 1000 | IGBT 1200V 43A 298W TO247... |
HGTG20N60C3D | ON Semicondu... | 0.0 $ | 1000 | IGBT 600V 45A 164W TO247I... |
HGTG12N60C3D | ON Semicondu... | 4.63 $ | 70 | IGBT 600V 24A 104W TO247I... |
HGTG30N60A4 | ON Semicondu... | -- | 1000 | IGBT 600V 75A 463W TO247I... |
HGTG30N60A4D | ON Semicondu... | -- | 1000 | IGBT 600V 75A 463W TO247I... |
HGTG10N120BND | ON Semicondu... | -- | 445 | IGBT 1200V 35A 298W TO247... |
HGTG18N120BND | ON Semicondu... | 4.97 $ | 440 | IGBT 1200V 54A 390W TO247... |
HGTG5N120BND | ON Semicondu... | -- | 1000 | IGBT 1200V 21A 167W TO247... |
HGTG11N120CND | ON Semicondu... | -- | 1000 | IGBT 1200V 43A 298W TO247... |
HGTG30N60C3D | ON Semicondu... | -- | 20 | IGBT 600V 63A 208W TO247I... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT