HGTG30N60B3 Allicdata Electronics
Allicdata Part #:

HGTG30N60B3FS-ND

Manufacturer Part#:

HGTG30N60B3

Price: $ 3.60
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 60A 208W TO247
More Detail: IGBT 600V 60A 208W Through Hole TO-247
DataSheet: HGTG30N60B3 datasheetHGTG30N60B3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.26970
10 +: $ 2.93706
100 +: $ 2.40647
500 +: $ 2.04860
1000 +: $ 1.72773
Stock 1000Can Ship Immediately
$ 3.6
Specifications
Power - Max: 208W
Base Part Number: HGTG30N60
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C: 36ns/137ns
Gate Charge: 170nC
Input Type: Standard
Switching Energy: 500µJ (on), 680µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Pulsed (Icm): 220A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction

The HGTG30N60B3 belongs to the IGBT family of transistors which are designed to handle high-current and high-power applications. It is a single IGBT and has excellent performance characteristics.

Application Field

HGTG30N60B3 is mainly suitable for high-power, high-frequency switching applications. It can be used for power switching such as power supplies, motor control, high-voltage DC converters and more.HGTG30N60B3 is designed to be used in industrial applications such as welding, lighting control, induction heating, avionics, aerospace and more. That\'s why it has to meet the most stringent requirements.

Working Principle

HGTG30N60B3 consists of two state components; the base and the emitter. When voltage is applied to the base, the electrons flow from the emitter to the collector creating a path for current flow.When the current flow is stopped, the current is blocked and the transistor is in the OFF state. This behavior is different from a conventional bipolar transistor, which requires a voltage applied to the base-collector junction for the current to flow.

Features

HGTG30N60B3 has many features, such as:- It has an excellent performance in high-current and high-power switching application- It can handle a high voltage, up to 600V- It has an estimated total gate charge of 19nC- It has an excellent safe operating area (SOA)- It has an excellent switching times performance and a low saturation voltage

Conclusion

HGTG30N60B3 single IGBT is an ideal choice for high-power and high-frequency switching applications. It has excellent performance characteristics and can handle up to 600V. It has an excellent SOA and a low saturation voltage. With its superior features, HGTG30N60B3 is perfect for applications such as motor control, power supplies, induction heating and more.

The specific data is subject to PDF, and the above content is for reference

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