Allicdata Part #: | HGTG30N60B3FS-ND |
Manufacturer Part#: |
HGTG30N60B3 |
Price: | $ 3.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 60A 208W TO247 |
More Detail: | IGBT 600V 60A 208W Through Hole TO-247 |
DataSheet: | HGTG30N60B3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 3.26970 |
10 +: | $ 2.93706 |
100 +: | $ 2.40647 |
500 +: | $ 2.04860 |
1000 +: | $ 1.72773 |
Specifications
Power - Max: | 208W |
Base Part Number: | HGTG30N60 |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 480V, 30A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 36ns/137ns |
Gate Charge: | 170nC |
Input Type: | Standard |
Switching Energy: | 500µJ (on), 680µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 220A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The HGTG30N60B3 belongs to the IGBT family of transistors which are designed to handle high-current and high-power applications. It is a single IGBT and has excellent performance characteristics.Application Field
HGTG30N60B3 is mainly suitable for high-power, high-frequency switching applications. It can be used for power switching such as power supplies, motor control, high-voltage DC converters and more.HGTG30N60B3 is designed to be used in industrial applications such as welding, lighting control, induction heating, avionics, aerospace and more. That\'s why it has to meet the most stringent requirements.Working Principle
HGTG30N60B3 consists of two state components; the base and the emitter. When voltage is applied to the base, the electrons flow from the emitter to the collector creating a path for current flow.When the current flow is stopped, the current is blocked and the transistor is in the OFF state. This behavior is different from a conventional bipolar transistor, which requires a voltage applied to the base-collector junction for the current to flow.Features
HGTG30N60B3 has many features, such as:- It has an excellent performance in high-current and high-power switching application- It can handle a high voltage, up to 600V- It has an estimated total gate charge of 19nC- It has an excellent safe operating area (SOA)- It has an excellent switching times performance and a low saturation voltageConclusion
HGTG30N60B3 single IGBT is an ideal choice for high-power and high-frequency switching applications. It has excellent performance characteristics and can handle up to 600V. It has an excellent SOA and a low saturation voltage. With its superior features, HGTG30N60B3 is perfect for applications such as motor control, power supplies, induction heating and more.The specific data is subject to PDF, and the above content is for reference
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