HGTG30N60C3D Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HGTG30N60C3D is a power transistor consisted of a 600V field-stop IGBT (Insulated Gate Bipolar Transistor) with a non-punch through (NPT) Emitter-controlled technology and an avalanche rated Ultrafast diode. It offers improved switching performance, higher blocking voltage capability, and better load current carrying ability resulting in optimum power conversion semiconductor packages for a variety of applications.

Application Field

HGTG30N60C3D are widely used in all kinds of power electronics, for example, AD/DC converters, variable speed drives, SMPS (switch mode power supplies) and UPS (uninterruptable power supplies). It\'s also used in solid state lighting and motor controls. In addition, this device is an ideal choice for automotive, aviation and industrial applications.

Working Principle

The switching of an IGBT is controlled by an N-channel power MOSFET, which works like an electronic gate. When current flows through the MOSFET\'s gate, the internal resistance of the device decreases and the current across the emitter decreases. Consequently, the electrical resistance between the emitter and collector increase and the IGBT operates in on state and the load connected to the collector and emitter receives current. If the gate current is removed, the IGBT resistance again increases, resulting in the load being disconnected and the IGBT operated in off state.

The Ultrafast diode of the HGTG30N60C3D has a fast switching speed for minimizing commutations losses and minimizing/limiting voltage spikes. Due to this, the load current is isolated from the electrical switching circuit, allowing for higher efficiency and power loss.

The Avalanche Rating characterizes the diode\'s ability to withstand dV/dt (transient voltage change) and di/dt (transient current change) behavior. This ensures temporal long term reliability when the device is subjected to high energy pulses or to repetitions of pulses. The HGTG30N60C3D provides a avalanche capability of up to 4x81A and up to 6x1000A, withstanding repetitive or single overcurrents.

HGTG30N60C3D offers excellent thermal performance, with many benefits including improved reliability and better switching performance. To guarantee long term reliability under harsh conditions, it also features over temperature protection.

The specific data is subject to PDF, and the above content is for reference