HGTG18N120BND Discrete Semiconductor Products

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The HGTG18N120BND IGBT is a High Voltage and High Power Level Transistor designed for various medium and high power applications. It features a high blocking voltage of 600V, high current rating of 200A and high switching speed of 7.5kHz. It has a wide range of applications, such as motor control and audio amplifiers, in addition to its wide range of uses as a high power switcher in automotive, industrial, lighting and home applications.

The HGTG18N120BND IGBT is a single transistor, meaning that it has only one transistor structure, rather than having two transistors in the package as a dual transistor device would. This makes it ideal for applications where size and power density are critical factors, as the devices can be stacked in an efficient and optimized manner due to their single transistor design. The device has a low on-state resistance of 0.48 ohm and a fast switching time of 5ns.

The working principle of the HGTG18N120BND IGBT is based on the principle of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a voltage-controlled device, meaning that the voltage applied to the gate terminal, which controls the flow of current, is the primary factor in determining the levels of current allowed to flow through the device. When the voltage applied to the gate is positive, electrons are driven across the channel between the source and drain terminal, allowing current to flow. On the other hand, when the voltage is negative, the electron flow is reduced and the current is shut off.

When the HGTG18N120BND IGBT is used in motor control applications, it is used to control the speed and direction of the motor or other loads. The device is turned on and off in rapid succession by controlling the voltage applied to its gate terminal. This rapid on and off switching allows for precise and efficient control of the motor or load, allowing for precise speed and torque control as well as improved efficiency.

In audio amplifier applications, the HGTG18N120BND IGBT is used to switch on and off the audio signal path, allowing for the amplification of the audio signal. The device is used to control the gain of the amplifier, allowing for precise control of the audio output. The device is also used to protect the amplifier from excess current flow, as it can limit the current flow if the voltage applied to its gate terminal is negative.

The HGTG18N120BND IGBT is an ideal solution for a wide variety of medium and high power applications. Its single transistor design allows for optimal packing and efficient use of space, while its low on-state resistance and fast switching time enable precise and efficient control of the loads it is connected to. The device is also suitable for use in motor control and audio amplifier applications, allowing for improved performance and efficiency.

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