HGTG30N60A4 Discrete Semiconductor Products

Power - Max:	463W
Base Part Number:	HGTG30N60
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	390V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C:	25ns/150ns
Gate Charge:	225nC
Input Type:	Standard
Switching Energy:	280µJ (on), 240µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 30A
Current - Collector Pulsed (Icm):	240A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The HGTG30N60A4 is an IGBT---a type of transistor---that belongs to the category of IGBTs known as "Single", as it is a single-die component. It is a 600V field-stop, three-terminal device with a maximum current rating of 30A and a drain-source on-state resistance of 0.01 ohms. This IGBT is optimally designed for high frequency power switch applications, and can be used in a range of applications such as motor drives, UPS systems, power converters and switches, welding, and general high-frequency power devices.The HGTG30N60A4 utilizes Insulated Gate Bipolar Transistor (IGBT) technology, which combines bipolar and field effect transistor technologies to create an extremely low-loss switch. An IGBT uses a combination of MOSFET gate drive circuits and bipolar transistors to achieve high input impedance, fast switching, and low on-state voltage drop. The integration of both technologies allows the IGBT to operate in a range of conditions and to handle high voltage and current levels. The circuit diagram for the HGTG30N60A4 IGBT shows the source, gate, and drain terminals. As with other IGBTs, the source and drain terminals are separated to allow for a high input impedance and low losses. The gate terminal is the control element of the IGBT, which is used to control the on/off status of the device. By controlling the voltage applied to the gate terminal, the current flowing through the device can be regulated.When the gate terminal is left open, no current flows through the device and the HGTG30N60A4 is off. As the gate voltage is increased, the current flowing through the IGBT increases, resulting in the device being turned on. The amount of current flowing in the IGBT is determined by the voltage applied to the gate, and by the characteristics of the device itself. Once the gate voltage is removed, the IGBT will automatically turn off.The HGTG30N60A4 is a power switch capable of fast switching times, improved efficiency, and high temperature performance. It is also capable of operating in a range of conditions, including noise-sensitive environments. It offers an extremely low on-state voltage drop that helps to reduce losses. The combination of high switching speeds, low losses, and high temperatures make the HGTG30N60A4 an ideal choice for a wide range of applications.

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