HGTG7N60A4 Discrete Semiconductor Products |
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Allicdata Part #: | HGTG7N60A4-ND |
Manufacturer Part#: |
HGTG7N60A4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 34A 125W TO247 |
More Detail: | IGBT 600V 34A 125W Through Hole TO-247-3 |
DataSheet: | HGTG7N60A4 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 125W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 390V, 7A, 25 Ohm, 15V |
Td (on/off) @ 25°C: | 11ns/100ns |
Gate Charge: | 37nC |
Input Type: | Standard |
Switching Energy: | 55µJ (on), 60µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 7A |
Current - Collector Pulsed (Icm): | 56A |
Current - Collector (Ic) (Max): | 34A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
:IGBT stands for Insulated Gate Bipolar Transistor and it is a type of power semiconductor used to convert electrical energy from one form to another. The HGTG7N60A4 is a single IGBT module with a maximum voltage of 600V DC. It is a wide bandgap semiconductor device used for controlling the high voltage supply in various electrical applications. This module is used in applications such as traction motors, switched mode power supplies, renewable energy systems, and many others.
The HGTG7N60A4 is a high-performance IGBT device with outstanding static characteristics and high efficiency operation in a wide range of applications. It is designed with a trench-gate process technology and it has built in protection circuitry to enable optimum performance and temperature stability. This IGBT device has a current rating of 60A and it has two isolated gate controlled emitter paths with low on resistance values.
The working principle of the HGTG7N60A4 is based on the switching action of the Insulated Gate Bipolar Transistor. When the gate is activated with a voltage signal, the device turns “on” and current begins to flow from the collector to the emitter path via the controlled base region. It is this principle that allows a user to switch the electrical power from one location to another with a simple electrical signal applied to the insulated gate. This makes HGTG7N60A4 ideal for applications such as high speed switching, high current designs, and for controlling high electrical loads.
The HGTG7N60A4 can be used in a wide range of applications, including traction motors, switched mode power supplies, and renewable energy systems. It can be used to control high voltage circuits and devices, including electric motor drives and power converters. It can also be used to create high efficiency DC-to-AC or AC-to-DC power conversion. Its built-in protection circuitry allows it to operate in harsh environments and creates a highly reliable and efficient power system.
The HGTG7N60A4 is a powerful device with a high current rating, outstanding static characteristics, and high efficiency operation. It is designed with a trench-gate process technology to enable optimum performance and temperature stability. This makes it an ideal device for a wide range of applications, including traction motors, switched mode power supplies, and renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
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