| Allicdata Part #: | HGTG12N60A4D-ND |
| Manufacturer Part#: |
HGTG12N60A4D |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 600V 54A 167W TO247 |
| More Detail: | IGBT 600V 54A 167W Through Hole TO-247 |
| DataSheet: |  HGTG12N60A4D Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Specifications
| Switching Energy: | 55µJ (on), 50µJ (off) |
| Base Part Number: | HGTG12N60 |
| Supplier Device Package: | TO-247 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 30ns |
| Test Condition: | 390V, 12A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 17ns/96ns |
| Gate Charge: | 78nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 167W |
| Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 12A |
| Current - Collector Pulsed (Icm): | 96A |
| Current - Collector (Ic) (Max): | 54A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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HGTG12N60A4D is a MOSFET-based insulated gate bipolar transistor (IGBT) designed for high-performance power applications. It is based on a 600V technology and offers a high DC current rating of 12A. HGTG12N60A4D is suitable for off-line SMPS applications including power supplies, switch-mode amplifiers, and motor drives.The device is available in a standard TO-247 package and offers less thermal resistance than equivalent devices in smaller packages. The wide body design of the package provides better thermal dissipation, allowing for higher power density and improved reliability.HGTG12N60A4D is suitable for operation up to 1200V, with a DC current rating of 12A. It has a maximum on-state voltage drop of 1.1V and a maximum gate threshold voltage of 1.9V. The device\'s soft, short-term on-state characteristics provide for a low total harmonic distortion (THD). The IGBT also features a fast switching speed, low gate drive power requirements and minimal drive losses.The working principle of an IGBT is based on the "punch-through" effect of a traditional MOSFET. In a MOSFET, when the voltage between the gate and source becomes sufficiently large, carriers are injected into the substrate, forming a conducting channel between the drain and source. When this occurs, the transistor is said to have been "punched-through".In an IGBT, the basic semiconductor structure is similar to that of a MOSFET. However, the structure of an IGBT also includes semiconductor junctions that act as diodes which permit carriers to be injected into and out of the channel. As a result, the transistor can be more efficiently utilized as both an electron and hole channel device.In addition to the improved switching performance, the IGBT also provides improved high-frequency effectiveness due to the fact that the junctions are essentially insensitive to frequency. This decreases switching losses and increases the device\'s efficiency.The IGBT\'s ability to simultaneously conduct current through both the electron and hole channels makes it an ideal choice for applications requiring high voltages or high frequencies. It is suitable for both DC and AC applications, making it an ideal choice for motor drives, SMPS, LED lighting, and other high-power applications.Overall, the HGTG12N60A4D device is an excellent choice for both DC and AC applications. Its high current rating, low voltage drop, low gate drive requirements, and improved switching performance make it an ideal candidate for a variety of applications. Furthermore, its wide body package provides increased thermal dissipation and improved reliability.
The specific data is subject to PDF, and the above content is for reference
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