HGTG20N60A4D Allicdata Electronics
Allicdata Part #:

HGTG20N60A4DFS-ND

Manufacturer Part#:

HGTG20N60A4D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 70A 290W TO247
More Detail: IGBT 600V 70A 290W Through Hole TO-247
DataSheet: HGTG20N60A4D datasheetHGTG20N60A4D Datasheet/PDF
Quantity: 284
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 284Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 280A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Power - Max: 290W
Switching Energy: 105µJ (on), 150µJ (off)
Input Type: Standard
Gate Charge: 142nC
Td (on/off) @ 25°C: 15ns/73ns
Test Condition: 390V, 20A, 3 Ohm, 15V
Reverse Recovery Time (trr): 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Part Number: HGTG20N60
Description

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The HGTG20N60A4D is a single IGBT (Insulated Gate Bipolar Transistor).

IGBTs are gate-controlled switches and are part of a set of devices known as power transistors. IGBTs are used in power supplies, motor control, and switching power amplifiers. A member of the transistor family, an IGBT combines the best of both bipolar and MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) technology.

As a power transistor, the main purpose of the IGBT is to control large currents. It offers high current and low on-state voltage drop, making it ideal for use as a high-speed switch for controlling power in a wide variety of applications. The HGTG20N60A4D has a maximum voltage rating of 600V and a maximum current rating of 20A. It provides a low on-state voltage drop and features fast switching times, making it suitable for use in a variety of applications.

The working principle of an IGBT is similar to that of a MOSFET, but differs in the way it is controlled. In an IGBT, the gate terminal is isolated from the semiconductor material which allows current to flow between the source and the drain terminals. When a positive voltage is applied to the gate, the IGBT is turned “on” and current is allowed to flow freely between the source and the drain. When the voltage is removed, the IGBT is turned “off” and current is prevented from flowing between the source and the drain.

The HGTG20N60A4D can be used in a wide variety of applications due to its high current rating and low voltage drop. Common applications include welding, brushless DC motor controls, AC motor control, Uninterruptible Power Supplies (UPS), switchmode power supplies, and other applications requiring high current switching capabilities at high speed.

The HGTG20N60A4D is a highly efficient and reliable IGBT for many applications. Its fast switching times and low on-state voltage drop make it an ideal choice for high current switching applications. It is also a versatile device, capable of handling a wide range of voltages and currents and is suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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