HGTG11N120CN Discrete Semiconductor Products

The HGTG11N120CN is a single IGBT (Insulated Gate Bipolar Transistor), which is a three-terminal power semiconductor device that combines the best features of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and BJTs (Bipolar Junction Transistors). It has higher commutation speed than BJTs, simpler gate control than MOSFETs and a low saturation voltage along with a high-current-carrying capacity.

The HGTG11N120CN is mainly used in three main types of applications: switching applications, pulse width modulation (PWM) power conversion and inverter applications. In switching applications, the device is used to switch the high voltage and current generated by a power source to the load. In PWM power conversion, the device is used to generate a modulated output that is fed to the load. In inverter applications, the device is used to generate an output voltage with a frequency that is adjustable.

The HGTG11N120CN has a working principle based on the MOSFET and BJT principles. A thyristor-like principle is also incorporated into the device, where the collector-emitter path is broken by a third terminal (the Gate). When a positive voltage is applied to the gate, it creates an electrostatic field that breaks down the barrier between the gate and the collector-emitter region, allowing current to pass from the collector to the emitter (ON-state). When the Gate voltage is decreased, the current stops flowing and the device is in an OFF-state. This switching action can be done at high speeds, thus making the device suitable for high-frequency applications.

The HGTG11N120CN has a maximum collector-emitter voltage of 1200V, maximum collector current of 11A, and maximum gate-emitter voltage of 20V. It also has a minimum breakdown voltage of 5V (Vcesat) and a fall time of 15ns (tf).

In conclusion, the HGTG11N120CN is a single IGBT device with the best features of a MOSFET and BJT. It is mainly used in switching, PWM power conversion, and inverter applications. It has a maximum collector-emitter voltage of 1200V, maximum collector current of 11A, and maximum gate-emitter voltage of 20V. It also has a minimum breakdown voltage of 5V (Vcesat) and a fall time of 15ns (tf).