Allicdata Part #: | HGTG18N120BN-ND |
Manufacturer Part#: |
HGTG18N120BN |
Price: | $ 4.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 54A 390W TO247 |
More Detail: | IGBT NPT 1200V 54A 390W Through Hole TO-247 |
DataSheet: | HGTG18N120BN Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
450 +: | $ 3.89140 |
Power - Max: | 390W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 960V, 18A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 23ns/170ns |
Gate Charge: | 165nC |
Input Type: | Standard |
Switching Energy: | 800µJ (on), 1.8mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 18A |
Current - Collector Pulsed (Icm): | 165A |
Current - Collector (Ic) (Max): | 54A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
HGTG18N120BN are part of the single-IGBT transistors family. These transistors are designed to provide high efficiency in power handling for various applications and can work in high voltage and high frequency conditions. They are also highly reliable and have lower switching losses compared to traditional MOSFETs.
HGTG18N120BN transistors have a range of use cases in various industries. Their power conditioning and regulating capabilities are highly useful for motor drive, welding, energy storage and other industrial applications. They can also be used in power supplies for medical, automotive, aerospace and industrial purposes. In addition, they can be used in many other areas such as green energy, telecommunications and the military.
The HGTG18N120BN single-IGBT is especially suitable for high frequency applications due to its low-on-resistance and low switching losses. Moreover, these transistors can also be used in applications like high-end UPS, PFC, solar inverters and LED drivers.
The working principle of these transistors is simple. They are composed of two Mosfets, which work together to switch higher voltages. The power switching is done via the "body diode" which uses diodes to provide current to the load. When the high voltage is applied, it closes the gate and the current can pass through the load. The size of the MOSFETs allows for higher power handling capability, high switching frequency and fast drive time.
The HGTG18N120BN transistors offer a number of advantages in terms of performance and reliability compared to traditional MOSFETs. They have higher switching currents, faster response time and improved thermal performance. Additionally, they have lower on-resistance and power losses, longer life cycle and higher reliability. Their cost is also lower compared to other types of IGBTs.
In summary, HGTG18N120BN single-IGBT transistors are highly reliable and efficient transistors used in a wide range of applications. They offer fast switching and high peak current capabilities, higher voltage handling and improved thermal performance. In addition, they are cost effective and have longer life cycles. They are suitable for various applications such as motor drives, welding, energy storage, medical, automotive, aerospace, military and green energy.
The specific data is subject to PDF, and the above content is for reference
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