Allicdata Part #: | HGTG30N60A4D-ND |
Manufacturer Part#: |
HGTG30N60A4D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 75A 463W TO247 |
More Detail: | IGBT 600V 75A 463W Through Hole TO-247-3 |
DataSheet: | HGTG30N60A4D Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 280µJ (on), 240µJ (off) |
Base Part Number: | HGTG30N60 |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 55ns |
Test Condition: | 390V, 30A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 25ns/150ns |
Gate Charge: | 225nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 463W |
Vce(on) (Max) @ Vge, Ic: | 2.6V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 240A |
Current - Collector (Ic) (Max): | 75A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The HGTG30N60A4D is an Insulated Gate Bipolar Transistor (IGBT) and belongs to the Single High Voltage Insulated Gate Bipolar Transistors family. It is developed and manufactured by Infineon Technologies, a leading company in developing and producing power semiconductor technologies and related products. It is designed to drive high current loads and to offer a low switching losses.
The HGTG30N60A4D is an advanced and reliable power semiconductor device that is suited for reducing and controlling power switching losses in power switch applications. It is capable of working at high voltage levels of up to 600V with a continuous drain-source current (ID) of up to 30A. It is mainly used in power converters like AC/DC and DC/AC, as well as in motor drives, welding and uninterruptible power supplies applications.
Working Principle:
The HGTG30N60A4D is composed of three layers of silicon. The bottom layer is composed of an N-channel Field Effect Transistor (FET), which acts as the switch. The middle layer is composed of an insulated gate and the top layer is composed of a PN-junction, which serves as a bipolar transistor. The IGBT is operated by supplying the gate with an electric signal, which generates a voltage drop across the gate-emitter gap. This voltage drop can be used to control the conduction of the IGBT in the range of hundreds of volts. Once the conduction of the IGBT has been established, a current can flow through the IGBT. When the current through the IGBT reaches the saturation point, it is cut off, and the current will no longer flow through it.
The HGTG30N60A4D is capable of carrying high currents and controlling them in a very efficient way. It is also very reliable, as it can handle a wide range of temperatures and voltage levels. This makes it ideal for applications where a high level of power switching is required.
Overall, the HGTG30N60A4D is a reliable and efficient power semiconductor device that is perfect for applications where high levels of power switching and control are required. It is perfect for a wide range of applications including AC/DC, DC/AC, motor drives, welding and uninterruptible power supplies. It is highly reliable and can handle voltages and temperatures up to 600V and 150ºC respectively.
The specific data is subject to PDF, and the above content is for reference
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