HGTG5N120BND Discrete Semiconductor Products

Power - Max:	167W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	65ns
Test Condition:	960V, 5A, 25 Ohm, 15V
Td (on/off) @ 25°C:	22ns/160ns
Gate Charge:	53nC
Input Type:	Standard
Switching Energy:	450µJ (on), 390µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 5A
Current - Collector Pulsed (Icm):	40A
Current - Collector (Ic) (Max):	21A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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HGTG5N120BND Application Field and Working Principle

The HGTG5N120BND can be categorised into the family of transistors, specifically IGBTs (Insulated Gate Bipolar Transistors), that fall within the single range category. In this article, we will discuss its application field and working principle, along with the advantages it offers for specific applications. An IGBT is an electronic power semiconductor device which combines the advantages of both a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a BJT (Bipolar Junction Transistor). In simple terms, an IGBT is a kind of hybrid between a MOSFET and BJT. The HGTG5N120BND falls into the range of single IGBTs, which offers the advantage of fast switching over standard BJTs, and the capability of high-power density. This results in higher performance than conventional BJTs and MOSFETs. The HGTG5N120BND’s main application field is motor controllers, specifically ac and dc motors. AC motors are typically used in residential and light commercial applications, while DC motors are more common in industrial applications. It is also popularly used in solar tracking systems, HVAC (Heating, Ventilation & Air Conditioning) systems, and in variable speed drive systems. Let’s now understand the working principle of a single IGBT. A single IGBT is composed of three layers. The first layer is the base which is made up of n-type silicon material. This is followed by a thin layer of P-silicon, which acts as the gate insulation. The last layer is the emitter, which is the source of electrons. When a current is applied to the gate of an IGBT, it causes a build up of electrons in the base layer, which in turn creates negative voltage in the emitter. This allows current to flow between the emitter and collector. When there is no current applied to the gate, the Collector-Emitter path is blocked, and electrons cannot transfer. This is the basic principle of an IGBT. Unlike BJTs and MOSFETs, the HGTG5N120BND has better thermal and electrical stability. This allows for higher power handling capability, which is why it is a preferred choice for the applications mentioned above. It also has fast switching speed, and low noise and loss. Furthermore, its package size is small, making it suitable for space constrained applications such as in solar tracking systems. Overall, the use of the HGTG5N120BND single IGBT offers advantages for a wide range of applications, from residential and light commercial to industrial uses. Its ability to handle high power, small size, and fast switching time make it an ideal choice for those who require reliable power electronics.

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