HGTG12N60C3D Discrete Semiconductor Products |
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Allicdata Part #: | HGTG12N60C3D-ND |
Manufacturer Part#: |
HGTG12N60C3D |
Price: | $ 4.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 24A 104W TO247 |
More Detail: | IGBT 600V 24A 104W Through Hole TO-247 |
DataSheet: | HGTG12N60C3D Datasheet/PDF |
Quantity: | 70 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.21470 |
10 +: | $ 3.78567 |
100 +: | $ 3.10187 |
500 +: | $ 2.64058 |
1000 +: | $ 2.22699 |
Switching Energy: | 380µJ (on), 900µJ (off) |
Base Part Number: | HGTG12N60 |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 42ns |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 48nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 104W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 96A |
Current - Collector (Ic) (Max): | 24A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
High-Voltage Technology Group (HGTG) is a world leader in the design and manufacture of advanced semiconductor technology. This is the 12 N60C3D, an Insulated-Gate Bipolar Transistor (IGBT). It is a single active device, excellent for high-current, high-voltage applications.
HGTG12 N60C3D has a wide range of applications in different industries, such as automotive, renewable energy, communications, aerospace, military, and medical.
IGBTs are used in power supplies, motor drives, and other applications where high-current and high-voltage operation is necessary. They provide the power switch with minimal power losses during switching and high switching speeds compared to traditional transistors.
The HGTG 12 N60C3D device is ideal for applications requiring high-current and high-voltage operation. Its features make it suitable for use in a variety of applications, including:
- Motor drives and inverters
- Uninterruptible power supplies
- Variable frequency drives
- AC/DC convertors
- Power converters
- Photovoltaic inverters
The working principle of the HGTG 12N60C3D is relatively simple. It has a gate-source voltage of 12V, and a continuous-drain current rating of 60A.
The IGBT consists of two components, an n-type transistor and a p-type transistor. A bias voltage is applied to the gate of the n-type transistor, which causes it to become conductive. Current then flows from the gate to the drain.
As the current passes through the n-type transistor, a voltage drop takes place across it, creating a voltage drop across the p-type transistor. This results in an internal voltage between the gate and the source, inducing a current flow from the source to the drain.
The IGBT therefore acts as an efficient switch, allowing current to flow freely between the source and the drain when the gate voltage is applied.
The HGTG 12N60C3D is an outstanding IGBT in its class, offering high efficiency, reliability, and power. It is ideal for applications needing a high-current, high-voltage switch.
The specific data is subject to PDF, and the above content is for reference
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