IPB034N06N3GATMA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB034N06N3GATMA1 is a trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Infineon Technologies. It belongs to their OptiMOS family, meaning that it features improved system effectiveness when compared to the devices of previous generations.

Although the OptiMOS family contains multiple different devices, the IPB034N06N3GATMA1 is particular suited to applications requiring efficient operation of high power at an economical cost. This makes it a popular choice in motor control, LED lighting and industrial systems, among other applications. It is available in a power SMD (Surface Mount Device) package, designed to occupy a limited printed circuit board (PCB) area.

A MOSFET is a type of transistor that enables its current conduction with the application of a low-level voltage. When voltage is applied to the gate terminal of the MOSFET, it creates an electrostatic field that enables current to flow between its two main terminals, the source and the drain. In the case of the IPB034N06N3GATMA1, the maximum drain current (Id) is 50A.

The drain-source on-state resistance (Rds) is one of the main parameters that determines the efficiency of a power MOSFET. According to the datasheet, the Rds of the IPB034N06N3GATMA1 is 3 mΩ at 10 V. When combined with its high current handling capabilities, this makes it an ideal choice for applications requiring high efficiency. Additionally, the device has an avalanche energy of 455 mJ at 25°C, allowing its gate-source capacitance (Cgfs) to be quickly discharged from the voltage level required for conduction to a safe level, minimizing device wear and improving reliability compared to other MOSFETs.

Another main feature of the IPB034N06N3GATMA1 is its robustness against overvoltage. It has a drain-source breakdown voltage (BVdss) of 30V, enabling operation at higher voltages with minimal risk of damage. In addition, it also has an impressive maximum junction temperature of 175%, meaning it can be used in high-temperature environments without sacrificing its performance.

Finally, the IPB034N06N3GATMA1 has a threshold voltage (Vth) of 4V, meaning that it requires a relatively low activation voltage to start conduction. This makes it ideal for applications requiring a low activation level, such as battery-operated devices.

In conclusion, the IPB034N06N3GATMA1 is an excellent choice for applications requiring efficient operation of high power at an economical cost. It features an impressive maximum drain current of 50A, an ultra-low Rds of 3 mΩ, an avalanche energy of 455 mJ and an maximum junction temperature of 175%. Additionally, its robustness against overvoltage and a relatively low threshold voltage of 4V further puts it ahead of its competitors.

The specific data is subject to PDF, and the above content is for reference