IPB05N03LA G Allicdata Electronics
Allicdata Part #:

IPB05N03LAG-ND

Manufacturer Part#:

IPB05N03LA G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 80A D2PAK
More Detail: N-Channel 25V 80A (Tc) 94W (Tc) Surface Mount PG-T...
DataSheet: IPB05N03LA G datasheetIPB05N03LA G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 50µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 94W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB05N03LA G is a high-voltage N-channel low-side switch, suitable for load switch and OR-ing applications, designed to be used in a wide range of power conversion solutions. It is designed to control very high currents while providing very low on-resistance and improved ESD protection. This device is a good choice for load switch and OR-ing applications in applications such as battery cell balancing and other load switching. The device is designed to operate up to +100V drain-source voltage (VDS) and with a +20V gate drive.

Application Field

The IPB05N03LA G is best used for high voltage and low voltage switching applications. It is mainly used in battery cell balancing, OR-ing applications, and high current switching applications. It can also be used as an on/off switch for DC circuits, and it is suitable for automotive, industrial, and communications systems.

The device is especially useful for battery balancing applications, as it has a low on-resistivity, and it is able to handle high currents. This makes it ideal for bypassing battery packs in order to balance their cell voltages.

In OR-ing applications, the device can be used to share current between two or more power sources. It is able to provide power conversion solutions with improved ESD protection and lower on-resistance. This helps to improve the reliability and efficiency of the application.

The device can also be used in high current switching applications. It is able to safely handle currents up to +20A and its high voltage tolerance makes it an excellent choice for switching high-power applications.

Finally, the device can be used in automotive, industrial and communications systems that require reliable and efficient power conversion with excellent ESD protection.

Working Principle

The IPB05N03LA G is a high-voltage N-channel low-side switch. It works by controlling the voltage applied to the gate through a gate driver. When the gate voltage is at a low voltage, the switch is off, and when the gate voltage is increased, the current flows through the drain and source terminals, turning the switch on.

The IPB05N03LA G is designed to reliably handle high currents for applications such as battery cell balancing. This is possible because the device has a low on-resistance, which helps to achieve a low voltage drop to improve overall efficiency.

In OR-ing applications, the device is able to provide power conversion solutions with improved ESD protection. This works by controlling the voltage applied to the gate, so that when two power sources supply current, the one with the higher voltage will be automatically selected.

The device is also designed to provide excellent ESD protection in automotive, industrial and communications applications. This is achieved by preventing high voltage spikes through the low on-resistance and the gate drive which enables the switch to quickly respond to any high voltage spikes.

Overall, the IPB05N03LA G is an excellent choice for high voltage and low voltage switching applications in power conversion solutions. Its low on-resistance, high current capability and excellent ESD protection make it an ideal device in battery balancing, OR-ing applications and high current switching applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPB0" Included word is 40
Part Number Manufacturer Price Quantity Description
IPB096N03LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 35A TO-26...
IPB05CN10N G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 100A TO2...
IPB06CN10N G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 100A TO2...
IPB08CN10N G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 95A TO26...
IPB08CNE8N G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 85V 95A TO263...
IPB022N04LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 90A TO263...
IPB023N04NGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 90A TO263...
IPB023N06N3GATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 140A TO26...
IPB039N04LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 80A TO263...
IPB041N04NGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 80A TO263...
IPB049N06L3GATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 80A TO263...
IPB052N04NGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 70A TO263...
IPB065N15N3GE8187ATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 150V 130A TO2...
IPB072N15N3GE8187ATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 150V 100A TO2...
IPB075N04LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 50A TO263...
IPB093N04LGATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 40V 50A TO263...
IPB097N08N3 G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 80V 70A TO263...
IPB048N15N5LFATMA1 Infineon Tec... 31.19 $ 5000 MOSFET N-CH 150V 120A TO2...
IPB090N06N3GATMA1 Infineon Tec... 0.37 $ 1000 MOSFET N-CH 60V 50A TO263...
IPB019N08N3GATMA1 Infineon Tec... 2.39 $ 1000 MOSFET N-CH 80V 180A TO26...
IPB09N03LAT Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 50A D2PAK...
IPB05N03LAT Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 80A D2PAK...
IPB06N03LAT Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 50A D2PAK...
IPB03N03LA Infineon Tec... -- 1000 MOSFET N-CH 25V 80A D2PAK...
IPB03N03LB Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A D2PAK...
IPB04N03LB Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A D2PAK...
IPB04N03LB G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A D2PAK...
IPB05N03LA G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 80A D2PAK...
IPB05N03LB Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 80A D2PAK...
IPB065N06L G Infineon Tec... -- 1000 MOSFET N-CH 60V 80A D2PAK...
IPB06N03LA G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 25V 50A D2PAK...
IPB06N03LB Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 50A D2PAK...
IPB06N03LB G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 50A D2PAK...
IPB09N03LA G Infineon Tec... -- 1000 MOSFET N-CH 25V 50A D2PAK...
IPB05N03LA Infineon Tec... -- 1000 MOSFET N-CH 25V 80A D2PAK...
IPB06N03LA Infineon Tec... -- 1000 MOSFET N-CH 25V 50A D2PAK...
IPB09N03LA Infineon Tec... -- 1000 MOSFET N-CH 25V 50A D2PAK...
IPB021N06N3GATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 120A TO26...
IPB034N06N3GATMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 100A TO26...
IPB057N06NATMA1 Infineon Tec... 0.56 $ 1000 MOSFET N-CH 60V 17A TO263...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics