Allicdata Part #: | IPB097N08N3GTR-ND |
Manufacturer Part#: |
IPB097N08N3 G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 70A TO263-3 |
More Detail: | N-Channel 80V 70A (Tc) 100W (Tc) Surface Mount D²P... |
DataSheet: | IPB097N08N3 G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 46µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.7 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An IPB097N08N3G is a type of field-effect transistor (FET) with a metal–oxide–semiconductor (MOS) configuration. It is an enhancement-mode (E-mode) transistor, meaning that it needs an external voltage to turn its channel on. When the gate voltage is applied, the junction between the source and the drain changes its state from OFF to ON and the transistor is allowed to conduct current from the drain to the source. The most important characteristic of this type of transistor is its low threshold voltage: close to zero volts.
The IPB097N08N3G is widely used in many applications due to the fact that it has a very low on-resistance and is capable of carrying high amounts of current in a very small space. It is typically used in power applications, such as power amplifiers, power regulation, voltage regulation and switching power supplies. This type of transistor also finds applications in logic circuits and displays.
This MOSFET has an n-channel configuration, meaning that the source terminal is connected to the n-type semiconductor layer and the drain terminal is connected to the p-type layer. The metal–oxide–semiconductor gate is located between the source and drain and acts as the control element of the transistor. The voltage applied to the gate controls the junction between the source and the drain. If the gate voltage is higher than the threshold voltage, the junction between the source and the drain is turned on and current can flow from the drain to the source. The gate also acts as an electrical insulator, preventing any leakage current from flowing through it.
The IPB097N08N3G has a maximum drain-source voltage of 100 V and a drain current of 0.3 A. It has a breakdown voltage of 1 V and a gate-source threshold voltage of 0.2 V. It also has a gate-source capacitance of 5.1 pF and a total gate charge of 8 nC. The transistor is also capable of fast switching, which makes it suitable for applications that require high-speed switching.
In summary, the IPB097N08N3G is a type of field-effect transistor that has a metal–oxide–semiconductor configuration. It has an n-channel configuration and a very low on-resistance. It is used in many applications such as power amplifiers, power regulation, voltage regulation and switching power supplies. This type of transistor also finds various applications in logic circuits and displays. It has a maximum drain-source voltage of 100 V and a gate-source threshold voltage of 0.2 V. Its gate-source capacitance and total gate charge are 5.1 pF and 8 nC respectively.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPB096N03LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A TO-26... |
IPB05CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
IPB06CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
IPB08CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 95A TO26... |
IPB08CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 95A TO263... |
IPB022N04LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 90A TO263... |
IPB023N04NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 90A TO263... |
IPB023N06N3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 140A TO26... |
IPB039N04LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO263... |
IPB041N04NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO263... |
IPB049N06L3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 80A TO263... |
IPB052N04NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 70A TO263... |
IPB065N15N3GE8187ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 150V 130A TO2... |
IPB072N15N3GE8187ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 150V 100A TO2... |
IPB075N04LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 50A TO263... |
IPB093N04LGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 50A TO263... |
IPB097N08N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 70A TO263... |
IPB048N15N5LFATMA1 | Infineon Tec... | 31.19 $ | 5000 | MOSFET N-CH 150V 120A TO2... |
IPB090N06N3GATMA1 | Infineon Tec... | 0.37 $ | 1000 | MOSFET N-CH 60V 50A TO263... |
IPB019N08N3GATMA1 | Infineon Tec... | 2.39 $ | 1000 | MOSFET N-CH 80V 180A TO26... |
IPB09N03LAT | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A D2PAK... |
IPB05N03LAT | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A D2PAK... |
IPB06N03LAT | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A D2PAK... |
IPB03N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 80A D2PAK... |
IPB03N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
IPB04N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
IPB04N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
IPB05N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 80A D2PAK... |
IPB05N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
IPB065N06L G | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 80A D2PAK... |
IPB06N03LA G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 25V 50A D2PAK... |
IPB06N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A D2PAK... |
IPB06N03LB G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 50A D2PAK... |
IPB09N03LA G | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A D2PAK... |
IPB05N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 80A D2PAK... |
IPB06N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A D2PAK... |
IPB09N03LA | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 50A D2PAK... |
IPB021N06N3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPB034N06N3GATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 100A TO26... |
IPB057N06NATMA1 | Infineon Tec... | 0.56 $ | 1000 | MOSFET N-CH 60V 17A TO263... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...