IPB065N15N3GE8187ATMA1

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The IPB065N15N3GE8187ATMA1 is a high power Mosfet that is used in a variety of applications. It is the perfect choice for applications where high voltage, high speed, and high current switching are necessary. The device is constructed using a N-type MOSFET structure with low gate-source capacitance, low on-state resistance, excellent thermal dissipation, and an exceptionally low gate charge. The IPB065N15N3GE8187ATMA1 is capable of switching currents of up to 65A with on-resistances as low as 0.3 ohms. It is also capable of operating at high frequencies, making it ideal for high speed switching applications. The device can operate in both the linear and saturation regions and can handle robust gate voltages of up to 20V.

The main application sectors of the IPB065N15N3GE8187ATMA1 include power supply switching, motor control, and audio amplifiers. In power supply switching, the Mosfet can be used to create high power and high efficiency power converters with extremely low on-resistances and high frequency operation. The Mosfet can also be used in motor control applications, allowing it to achieve high speed switching with extremely low on-descents and off-channels. The excellent thermal performance of the device also make it ideal for audio amplifiers, where high power and low distortion is required.

The working principle of the IPB065N15N3GE8187ATMA1 relies on the fact that when a voltage is applied to the gate-source of the Mosfet, a channel is created between the source and drain. This channel varies in resistivity depending on the gate-source voltage, allowing for adjustable current flow between the source and drain. The presence of the drain also affects the resistivity of the channel, and can be adjusted either positively or negatively to control the current flow. The voltage applied on the gate-source acts as the control signal, while the source voltage helps set the starting voltage of the device. The device is also capable of working in both linear and saturated regions, depending on the needs of the application.

In summary, the IPB065N15N3GE8187ATMA1 is an ideally suited high power Mosfet with a range of applications in switching, motor control, and audio amplifiers. It can handle high-voltages and current with low on-resistances, and can operate at high frequencies with robust gate voltages up to 20V. The device works by the creating a channel between the source and drain that is varied in resistance by the applied gate voltage, allowing for adjustable current flow.

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