
Allicdata Part #: | IPB052N04NGATMA1TR-ND |
Manufacturer Part#: |
IPB052N04NGATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 70A TO263-3 |
More Detail: | N-Channel 40V 70A (Tc) 79W (Tc) Surface Mount D²PA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 33µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPB052N04NGATMA1 is a type of transistor known as a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This particular MOSFET is an n-channel type and is made from a combination of silicon, a dielectric material, and gold. It is a package-style MOSFET with its contacts on a single surface, thus making it a single transistor.
MOSFETs are used in a wide variety of circuits and applications. They are used as voltage-controlled switches and amplifiers in everything from robots to televisions to automobiles. They are also used to regulate power in high-frequency amplification and radio frequency systems. In transistor circuits, they are used as switches due to their unique characteristics.
The IPB052N04NGATMA1 works by using a voltage applied to the gate terminal to create an electric field within the transistor. This electric field controls the flow of electrons through the transistor. When a voltage is applied to the drain terminal, current flows from the source to the drain. This current will vary based on the voltage applied to the gate terminal.
The IPB052N04NGATMA1 has a drain and source voltage of -4.5V to -20V and a gate voltage of -4.5V to -20V. This makes it ideal for use in circuits operating at low voltage levels, such as digital logic and low-power audio circuits. It also has a current rating of up to 4amps, making it capable of handling relatively high currents.
The IPB052N04NGATMA1 is also well-suited for use in circuits that require a low input impedance. This is due to the low capacitance between the gate and source terminals, which renders the MOSFET less susceptible to changes in voltage and current. Its fast switching speed makes it an excellent choice for use in high-frequency systems.
In conclusion, the IPB052N04NGATMA1 is a single MOSFET, designed for use in circuits operating at low voltage levels. Its low capacitance and fast switching speed make it well-suited for use in high-frequency systems and those requiring a low input impedance. It can handle current ratings up to 4amps, making it suitable for a range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPB052N04NGATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 70A TO263... |
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IPB05N03LB | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 80A D2PAK... |
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