IPB023N04NGATMA1

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IPB023N04NGATMA1 is a fast and treble-enhanced N-channel Trench MOSFET designed to deliver high power under a variety of operating conditions, from high-end power switching applications to smart home appliances. This MOSFET utilizes advanced silicon processing and advanced trench structure technology to ensure unparalleled low charge-and-discharge losses, low input and gate-charge, and low on-resistance for maximum efficiency and minimal power loss.

This device is a fourth-generation high-performance N-channel MOSFET that offers low circuitry and gate charge for fast switching with values of 7.4nC and 94nC respectively. It also has an on-resistance of only 5.1Ω (at 10V), creating an optimal combination of power-loss and energy-efficiency performance. With an enhanced gate oxide structure, this device offers high immunity to drain-induced-gate-leakage current and total gate charge. The integrated avalanche mode protection offers an added layer of safety, while allowing the MOSFET to operate in applications with high voltage transients.

This highly robust MOSFET is designed to meet system-level requirements and is ideal for a variety of applications, such as smart home appliances, DC-DC converters, solar-powered inverters and motor control for electric vehicles. It is also suitable for high-end power switching applications such as switchers, PV modules, IGBT/MOSFET integrated controllers, motor control and drive applications. Additionally, the device can be used in synchronous rectifiers, schottky diode replacements and in active clamp forward converters.

The IPB023N04NGATMA1 works by controlling current when a voltage is applied between the gate and source. This is the fundamental principle of a MOSFET – its gate acts as a gate valve, regulating the electrical current that is allowed to pass. When a small voltage is applied to the gate, the resistance of the MOSFET decreases, allowing a greater current to pass. Conversely, when the gate voltage is removed, the MOSFET acts as an open switch, completely stopping current flow.

The IPB023N04NGATMA1 is a highly advanced MOSFET device that offers outstanding performance and reliability in a wide range of applications. Its 4th-generation trench technology ensures low charge-and-discharge losses with low input and gate-charge for fast switching. Its avalanche protection and enhanced gate oxide structure further improve its immunity and energy-efficiency, while its integrated avalanche mode protection offers an added layer of safety. This device is an excellent choice for high-end power switching applications and is ideal for powering a variety of devices and systems.

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