Allicdata Part #: | IPB06N03LAINTR-ND |
Manufacturer Part#: |
IPB06N03LA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 50A D2PAK |
More Detail: | N-Channel 25V 50A (Tc) 83W (Tc) Surface Mount PG-T... |
DataSheet: | IPB06N03LA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 40µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2653pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPB06N03LA is a semiconductor device designed to control current or voltage flow. It is a type of field effect transistor (FET), specifically, it is a MOSFET (metal-oxide-semiconductor-field-effect-transistor) bipolar junction type that is single-source polarized. As its name implies, the device is capable of providing a high input impedance and high gate resistance.
An MOSFET is a transistor which uses metal-oxide-semiconductor as its active region. This type of transistor is characterized by its ability to switch on and off using a gate voltage. The gate voltage is used to change the electrical characteristics of the device and vary the current flow in the device. The application of the MOSFET is in the area of amplifiers, power switches, cathode ray tube (CRT) grids, as well as in analog-to-digital converters and other circuits that require a high input impedance.
The IPB06N03LA device is particularly suitable for use in high-switching frequency applications due to its low drain-source capacitance and low gate charge. It also has good linearity, temperature stability, and thermal capabilities, making it an ideal choice for power supplies and motor drives. In addition, its low gate charge makes it well-suited for use in switching applications, such as high-voltage solid-state relays.
The working principle of the IPB06N03LA is based on electrostatics. A metal-gate-oxide layer is used to create a voltage barrier between the metal gate and the semiconductor substrate. An applied voltage to the metal gate then creates an electric field that alters the threshold voltage of the device. This change in voltage then affects the current flow. When the gate voltage is higher than the threshold voltage, current can flow into the channel and the device is in its "on" state. When the gate voltage is lower than the threshold voltage, current is blocked from passing through the device and it is in its "off" state.
In addition to the voltage barrier, the IPB06N03LA also features a built-in high-frequency noise suppression capacitor. This capacitor eliminates noise spikes during high-frequency operations, which helps reduce interference and enable smoother transition of signals in the circuit. This device also has high on-resistance, which reduces power consumption and further enhances its performance.
The IPB06N03LA is versatile and has a wide range of applications. It can be used in various amplifiers, oscillators, power switches and CRT grids. It can also be used in digital circuits, motor controls, and various other industrial applications. With its high input impedance, low drain-source capacitance, low gate charge, and high on-resistance, the IPB06N03LA offers a unique combination of features that make it suitable for a variety of uses.
The specific data is subject to PDF, and the above content is for reference
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