Allicdata Part #: | IPB093N04LGATMA1TR-ND |
Manufacturer Part#: |
IPB093N04LGATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 50A TO263-3 |
More Detail: | N-Channel 40V 50A (Tc) 47W (Tc) Surface Mount D²PA... |
DataSheet: | IPB093N04LGATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 16µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPB093N04LGATMA1 belongs to a class of field-effect transistors (FETs) called metal-oxide-semiconductor FETs (MOSFETs). It is a single-element FET with four terminals: the source, the drain, the gate, and the body. The source and the drain are the elements that carry the current, whereas the gate serves as a control element that acts as a switch, allowing current to move through the source and drain.
The source, drain, and gate are all made of metal, hence the name "metal-oxide-semiconductor" FET. The body, or substrate, is made of a semiconductor material such as silicon. A gate voltage applied to the gate of the MOSFET will alter the electrical properties of the substrate and cause current to flow between the source and the drain. This phenomenon is known as the "field effect".
The IPB093N04LGATMA1 is a depletion-mode MOSFET which means that, a positive gate voltage will reduce the amount of current that is able to flow through the source and drain. This type of MOSFET is commonly used in switching and amplification applications where it can be used to control the level of current flowing through a load. For example, it can be used to control the speed and direction of a motor by switching off the power to the motor and allowing it to spin freely.
In addition to being used as a switch, MOSFETs can also be used as amplifiers. In an amplifier circuit, the MOSFET acts as a voltage-controlled resistor, allowing the output signal to be amplified or attenuated by changing the level of the gate voltage. This makes the IPB093N04LGATMA1 an ideal component for high frequency applications such as radio receivers, transmitters, and amplifiers.
The IPB093N04LGATMA1 is also widely used in power electronic designs. It is often used in high power switching applications, such as AC and DC power converters and motor controllers, due to its low on-resistance and high current carrying capacity. It can also be used to construct linear and switching regulators, such as those in laptop computers and portable navigation devices.
Overall, the wide variety of applications and working principle of the IPB093N04LGATMA1 indicates that it is a versatile, reliable, and powerful component. The fact that it is a single element device makes it easy to integrate into a project, and the ability to control its output with a single gate voltage makes it ideal for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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