IPB08CN10N G

Vgs(th) (Max) @ Id:	4V @ 130µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6660pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	8.2 mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	95A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPB08CN10N G Application Field and Working Principle

The IPB08CN10N G is a single N-channel enhancement mode MOSFET which is commonly used in electronic circuits. It was developed by the InterFET Corporation, which is a leading semiconductor manufacturer. The IPB08CN10N G is a medium to low power, high speed, high voltage MOSFET with excellent electrical and thermal characteristics. The device has a gate-source resistance of 0.04 ohms and a maximum drain-source voltage of 500 volts. It is also capable of switching up to 10 amps of current.The IPB08CN10N G is mainly used in consumer electronics, computers, and telecommunications devices. In consumer electronics it is often used to provide power switching for amplifiers, voltage regulators, inverters, and motor controllers. In computers, the device can be used for power management, switching, and protection. In telecommunications it is commonly used for power switches, amplifiers, and data converters.The IPB08CN10N G operates in an enhancement mode, which is the most common type of MOSFET operation. This type of operation takes advantage of the MOSFET’s channel, which is a narrow semiconductor channel between the source and drain terminals. When a voltage is applied to the gate terminal, it creates an electric field within the channel. This electric field then causes a current to flow between the source and drain terminals, allowing the voltage potential across the device to be controlled.The IPB08CN10N G is also capable of a “diode reaction” operation. This is when a voltage is applied between the source and drain terminals, the MOSFET conducts current between the two terminals. The diode reaction can be used to provide over-voltage protection and current limiting.In summary, the IPB08CN10N G is a single N-channel enhancement mode MOSFET which is commonly used in various electronic circuits. It has excellent electrical and thermal characteristics and is capable of switching large currents and voltages. The device is particularly useful in consumer electronics, computer, and telecommunications applications due to its ability to provide power switching, protection, and current limiting.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description