IPB04N03LB

Vgs(th) (Max) @ Id:	2V @ 70µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5203pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to IPB04N03LB

IPB04N03LB is a single channel N-Channel Field-Effect Transistor (FET), which is widely used in many industries and applications. It is a low power and high frequeny device, with a wide range of operating temperature. It is also known for its excellent performance in noise reduction and power efficiency.

Applications of IPB04N03LB

The IPB04N03LB is suitable for a wide range of applications, including switching, sensing, and audio processing. In particular, it is used widely in audio devices, computers, and drones. In the automotive industry, this transistor is widely used for radio, navigation, and other automotive electronics. Additionally, it is used for high speed communication, such as in Ethernet networks. Moreover, it is also suitable for various digital and analog circuits, and for DC-DC conversion.

Working Principle of IPB04N03LB

The IPB04N03LB is a N-Channel FET, which operates on the principle of electrical charge transfer. When a voltage is applied to the gate of the FET, electrons are attracted and repelled on the surface of the material, creating an inversion layer. This inversion layer separates the electrons from the gate, creating a semiconducting channel. An electric current then flows between the source and the drain of the FET, and can be controlled by the voltage applied to the gate.

Advantages of IPB04N03LB

IPB04N03LB is a low power FET, which features small size and low current consumption. This makes it ideal for applications where power efficiency is important, such as audio processing and drone operation. Moreover, IPB04N03LB offers excellent noise suppression, which makes it suitable for devices that require high noise immunity. Additionally, it has a wide range of operating temperature, which makes it suitable for many industrial applications.

Conclusion

The IPB04N03LB is a single channel N-Channel FET, which is widely used for various industrial applications, such as audio processing, switching, sensing, and automotive electronics. It is a low power device, with excellent noise suppression, and a wide range of operating temperature. Its operating principle is based on the electrical charge transfer and the formation of an inversion layer. In conclusion, IPB04N03LB is a great choice for applications where power efficiency and noise immunity are important.

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