Allicdata Part #: | IPB06N03LAXTINTR-ND |
Manufacturer Part#: |
IPB06N03LAT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 50A D2PAK |
More Detail: | N-Channel 25V 50A (Tc) 83W (Tc) Surface Mount PG-T... |
DataSheet: | IPB06N03LAT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 40µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2653pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IPB06N03LAT is a p-Channel Enhancement-Mode MOSFET transistor with a maximum current rating of 6A, a drain-source voltage of 30V and a gate-source voltage of ±20V. It has a reliable, low RDS (on) of 0.07Ω and a low gate charge QG of 15nC at 4.5V, making it ideal for a variety of applications, such as high-speed switching and audio amplifiers. In addition, its low gate charge, low input and output capacitance, and low S.D. (on) make it well-suited for high-frequency switching applications, such as in RGB LED lighting and digital amplifiers. Its low on-resistance and fast gate charge also make it suitable for use in high-power switching applications, such as motor control. The device is housed in a very small SO-8 package, which is convenient for space-sensitive applications.
The working principle behind the IPB06N03LAT is that it is a three terminal device which control’s the flow of electrons by varying the voltage applied across the gate. When no voltage is applied to the gate terminal, the device is in a OFF-state, which prevents current from flowing across the source and drain terminals. However, when a positive voltage is applied to the gate, the transistor will turn ON and electrons will flow across the source and drain terminals. This voltage adjustment process allows for the full control of the current flow rate.
The IPB06N03LAT can be used in a number of application fields, ranging from consumer-grade electronics to automotive, industrial and medical applications. Common uses of these devices include bus switches and converters, audio amplification, power MOSFET, inverters, motor control applications and DC-DC switchmode regulators. It is also suitable for applications that require current regulation, such as off-line AC power control, secondary rectification and class-D amplifiers.
The IPB06N03LAT is a great choice for high-power applications that require efficient power switching, low power loss and high reliability. Its low RDS (on), low gate charge, and low input and output capacitance make it suitable for high-speed switching and audio applications. Additionally, its small size and low S.D. (on) make it an ideal choice for space-sensitive applications. It is also suitable for use in industrial, medical and automotive markets.
Overall, the IPB06N03LAT is a great choice for applications that require efficient power switching with low power loss and high reliability. Its low RDS (on) and low gate charge, combined with its small size and low S.D. (on) make it especially suitable for those applications where space is a concern. It is a great choice for use in a wide range of applications, from consumer-grade electronics to automotive, industrial, and medical markets.
The specific data is subject to PDF, and the above content is for reference
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