IPB073N15N5ATMA1 Allicdata Electronics
Allicdata Part #:

IPB073N15N5ATMA1TR-ND

Manufacturer Part#:

IPB073N15N5ATMA1

Price: $ 1.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MV POWER MOS
More Detail: N-Channel 150V 114A (Tc) 214W (Tc) Surface Mount P...
DataSheet: IPB073N15N5ATMA1 datasheetIPB073N15N5ATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 1.79000
10 +: $ 1.73630
100 +: $ 1.70050
1000 +: $ 1.66470
10000 +: $ 1.61100
Stock 1000Can Ship Immediately
$ 1.79
Specifications
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 214W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Series: OptiMOS™-5
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 57A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IPB073N15N5ATMA1 Application Field and Working Principle

The IPB073N15N5ATMA1, otherwise known as a N-Channel MOSFET, is a type of semiconductor component that’s part of a larger family of transistors. Semiconductor components, like this MOSFET, are used to control and direct the flow of electricity along a circuit. This component uses a complex material called a metal oxide semiconductor, or MOS, which is an insulator that’s sandwiched between a metal oxide layer and a base. It utilizes a dielectric material to allow for a voltage and a current exchange.

The N-Channel MOSFET is designed to amplify or switch power circuits when required. It can also be used as a variable resistor, and it’s most commonly found in integrated circuits that are small and portable, usually in the form of digital circuits. This component can be used to switch both AC and DC current, depending on the design and requirement of the user. It’s commonly seen in power supplies, low-to-high voltage circuits, electronic logic gates, and surge protectors.

The IPB073N15N5ATMA1 is made up of three major parts, the source, the gate, and the drain. It’s intended to be used as a switching device, and can be used to switch on or off a variety of electrical components, depending on what’s needed. It works by passing a voltage through the gate to the source, which then passes the voltage to the drain. This is what enables the MOSFET to control the flow of electricity, and it can be used to regulate the amount of current passing through the circuit.

The IPB073N15N5ATMA1 is also an enhancement type MOSFET, meaning it can be turned on or off on demand. It requires negative gate control voltage, which means that it can be turned on with a negative voltage, and its power dissipation must remain within its thermal resistance. The MOSFET also comes with its own protection components, such as thermal protection, reverse current protection, and electrostatic protection, all of which are designed to protect the device from electrical damage.

The IPB073N15N5ATMA1 is a highly efficient, cost-effective component that can be used in many applications. It’s especially popular in high power circuits, where its ability to control the current and voltage of the circuit is key to its efficacy. Its small size and low power dissipation allow it to be used in many electronic devices, including computers, phones, and even in automotive applications.

In conclusion, the IPB073N15N5ATMA1 is a versatile semiconductor component that can be utilized in a variety of applications. Its ability to switch and regulate power means it can be used in many circuits, providing a reliable, efficient solution to power control needs. Its low power dissipation and small size also make it an ideal choice for high power applications, as it won’t take up too much space or create too much heat.

The specific data is subject to PDF, and the above content is for reference

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