Allicdata Part #: | IPB017N10N5ATMA1TR-ND |
Manufacturer Part#: |
IPB017N10N5ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 180A D2PAK-7 |
More Detail: | N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount P... |
DataSheet: | IPB017N10N5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.8V @ 279µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | PG-TO263-7 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPB017N10N5ATMA1 is of a type of FET known as a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is used as a switch or amplifier in microelectronic circuits and is found in a variety of applications, such as voltage regulators, motor controllers, and power converters. The basic operation of a MOSFET relies on the fact that it is a voltage-controlled device.
The IPB017N10N5ATMA1 is built using a silicon substrate and gate oxide layer. On the silicon substrate is a thin layer of metal which provides the connection between the gate and source terminals. The drain terminal is connected to the silicon substrate and creates a separate channel through which current can travel. When a voltage is applied to the gate terminal, this voltage is applied to the silicon substrate and gate oxide layer and creates a depletion region which modifies the conductivity of the channel between the drain and source. This in turn determines the flow of current between the two terminals. By changing the applied voltage, the resistance of the channel can be changed and this, in turn, controls the flow of current between the two terminals.
The IPB017N10N5ATMA1 can be used to switch electrical signals or control the flow of current in circuits. For example, in motor control applications, the MOSFET can be used to turn a motor on or off. It can also be used as a voltage regulator, as it can be used to reduce the voltage applied to a device. The MOSFET can also be used as a power converter, as it can be used to increase or decrease the level of power supplied to a device.
MOSFETs are also used in the design of operational amplifiers, power regulators, and power converters. In an operational amplifier, the MOSFET is used to control the gain of the amplifier by controlling the rate at which the output voltage changes with respect to the input. This allows the amplifier to effectively amplify an input signal. In a power regulator, the MOSFET is used to control the amount of power supplied to a device depending on the input voltage and current. Finally, in power converters, the MOSFET is used to convert the voltage of one type of voltage to another. This is important in applications such as photovoltaic systems, where the energy output of the system needs to be converted from DC to AC for it to be used.
The IPB017N10N5ATMA1 MOSFET is a versatile device and has a wide range of applications. It is important to understand the working principle of the device so that it can be used safely and reliably in a given application. The above-mentioned applications provide a good overview of the applications of MOSFETs, and with a working knowledge of the device, it can be used to great effect in any given application.
The specific data is subject to PDF, and the above content is for reference
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