
Allicdata Part #: | IPB070N06LGINTR-ND |
Manufacturer Part#: |
IPB070N06L G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 80A TO-263 |
More Detail: | N-Channel 60V 80A (Tc) 214W (Tc) Surface Mount D²P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 126nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IPB070N06L G is a high-voltage, low-power N-channel MOSFET that is suitable for use in a variety of applications. It is an advanced transistor technology that combines the performance of a MOSFET with the simplified construction of a power device. This device is capable of switching up to 50V and has the capability of operating up to a maximum current of 5A.
The IPB070N06L G is a single drain-source n-channel device that acts as a voltage-controlled switch. It is most commonly used to control the current flow through an electrical circuit in applications where an exact amount of current must be maintained. It is also used for applications where power consumption must be kept low, such as in automotive electronic systems.
Due to its inherent advantages, the IPB070N06L G is suitable for use in a range of applications. It can be used in audio amplifiers, DC-DC converters, LED drivers, and power supplies. It is also ideal for use in automotive components, including power window controllers, vehicle electronics, and HID lighting systems. It can also be used in a variety of other applications, including telecommunications, computing, and general-purpose switching.
The working principle behind the IPB070N06L G is that of a voltage-controlled switch. The device is constructed with four terminals and a gate. Applying a positive voltage to the gate terminal, which is referred to as the Gate-Source voltage, will create an electric field that in turn controls the current flow through the device. When the Gate-Source voltage is at a high potential, the device will be in an ON state and the current will flow through the channel. Conversely, if the Gate-Source voltage is at a very low potential, the device will be in an OFF state and the current will not flow through the channel.
The IPB070N06L G is capable of high speed switching due to its low on-state drain-source voltage and low gate-source current. This feature makes it suitable for use in applications where fast switching times are required, such as in power supplies, DC-DC converters, and switching regulators. It also has a high input impedance, which allows the device to remain in an OFF state when not in use, and helps in reducing power consumption.
The IPB070N06L G is a versatile device that offers a number of advantages over other MOSFET technologies. It can be used in a wide variety of applications, and is capable of providing reliable performance with low power consumption. Therefore, it is becoming increasingly popular among engineers and design professionals in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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