IPB050N06NGATMA1

Vgs(th) (Max) @ Id:	4V @ 270µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6100pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	167nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.7 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPB050N06NGATMA1 is a widely used N-Channel PowerMOS transistor specifically designed for high-voltage and current switching and for applications such as motor control inverters, lighting, and LED drivers. The IPB050N06NGATMA1 offers excellent power throughput and it features a low on-resistance, which helps to preserve power.The Power MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor, is a type of FET designed to reliably switch large currents at higher voltages than standard FETs. It achieves this by providing a larger depletion region, which in turn allows it to endure higher voltages before breakdown. Compared to other types of FETs, the PowerMOSFET is generally more efficient and requires less input power to drive the load.The IPB050N06NGATMA1 is an N-Channel power MOSFET with a breakdown voltage of 600V. It is designed to drive higher voltages and consequently handles larger currents than other types of FETs. Using the N-Channel MOSFET, the drain current is able to be controlled using gate voltage in comparison to the source voltage. This includes both steady-state and transient applications, meaning it can be used for DC-DC converters or AC switching.The IPB050N06NGATMA1 features a low on-resistance, which helps to minimize switching losses and reduce heat dissipation. Furthermore, its optimized shielded gate structure provides highly efficient noise immunity and also improves ESD protection. Additionally, the device is kept safe by the integrated gate oxide and junction oxide protection, two layers of oxide which protect against short circuiting.The IPB050N06NGATMA1 works on the principle of the majority-carrier device. The gate voltage is the primary variable used to control the on/off state of the MOSFET, and when the gate voltage exceeds the threshold value of the device, electrons are pulled in from the adjacent regions and the circuit is switched on. The amount of currents that can be driven by the device also depends on the size of the channel.In summary, the IPB050N06NGATMA1 is an N-Channel PowerMOS transistor that is capable of switching high voltages and currents. It features low on-resistance and has enhanced noise immunity and ESD protection, making it suitable for applications such as motor control inverters, lighting, and LED drivers. Its majority-carrier device principle works by applying a voltage to the gate of the device which exceeds the threshold value and allows electrons to be pulled in from the adjacent regions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description