Allicdata Part #: | IPB049N08N5ATMA1-ND |
Manufacturer Part#: |
IPB049N08N5ATMA1 |
Price: | $ 0.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V TO263-3 |
More Detail: | N-Channel 80V 80A (Tc) 125W (Tc) Surface Mount D²P... |
DataSheet: | IPB049N08N5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.81300 |
Vgs(th) (Max) @ Id: | 3.8V @ 66µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3770pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IPB049N08N5ATMA1 is a single N-channel enhancement mode Field-Effect Transistor (FET) device with an excellent combination of fast switching times and low on-resistance. This device is commonly used for switching and small signal applications. It is typically mounted on a four lead plastic or metal package, and is designed to minimize the switching and on-state losses in a circuit.
The main function of a MOSFET is to amplify the input signal. It is a three-terminal device that can be used to regulate the amount of current that flows through a circuit. In particular, N-channel MOSFETs are used to control the voltage across a circuit, by controlling the amount of current that is allowed to flow through the channel between source and drain.
The IPB049N08N5ATMA1 works by allowing current to flow through the channel between the source and the drain when a positive voltage is applied to the gate. When a negative voltage is applied, it will block the current from flowing through the channel, and the device will act as an open switch. The voltage and current values can be controlled just by adjusting the voltage applied to the gate.
Applications of the IPB049N08N5ATMA1 include switching applications such as DC-DC converters, H-bridge drivers, and level translators. It is also used in switched-mode power supplies, load switch circuits, and various other low-current switch designs. It can also be used in RF applications, as it has good RF performance.
The IPB049N08N5ATMA1 is a small but powerful device, making it suitable for a wide range of applications. Its high channel density and low on-resistance make it ideal for high-speed switching applications, while its low voltage and low gate charge make it suitable for lower voltage and low power applications. The device is commonly used in automotive, consumer and industrial applications, as it is capable of handling high levels of current and can withstand a wide range of temperatures.
The IPB049N08N5ATMA1 is a versatile and reliable device that can bring great power and performance to many different kinds of applications. It is reliable, cost-effective and easily implemented, which makes it a popular choice for many different kinds of electronics projects.
The specific data is subject to PDF, and the above content is for reference
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