IPS03N03LB G Allicdata Electronics
Allicdata Part #:

IPS03N03LBG-ND

Manufacturer Part#:

IPS03N03LB G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 90A IPAK
More Detail: N-Channel 30V 90A (Tc) 115W (Tc) Through Hole PG-T...
DataSheet: IPS03N03LB G datasheetIPS03N03LB G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 70µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPS03N03LB G is a high-voltage and high-speed small signal N-channel enhancement mode MOSFET. It is specially designed for switching applications and is suitable for use as an on/off switch, relay, chopper, key-fob and motor controller. With its low-charge injection characteristics, this transistor is ideal for digital switching applications.

The main purpose of the IPS03N03LB G is to provide a control voltage for the switching action. It is built with a unique single-channel-design to reduce the required gate-bias voltage, allowing for more efficient operation in digital applications. It is commonly used for power supplies, defibrillators and modern lighting systems. Additionally, the transistor can be used for solid-state switch control and digital signal level shifting.

The IPS03N03LB G is a vertical MOSFET with a gate-source voltage of 30V and gate-drain voltage of 20V. Its maximum drain current is 3A at an operating temperature of -55°C to 175°C. It is also equipped with a breakdown voltage of 350V and a threshold voltage of 5V. The junction temperature range is between -55°C to 175°C.

The basic operating principle of the IPS03N03LB G MOSFET is based on how a transistor works by amplifying or switching electrical signals. It typically contains two channel regions within its structure that are separated by an insulated gate. The source, drain and gate terminals are then used to control the flow of electricity through the channels. When a voltage is applied to the gate, it controls the flow of electrons between the source and the drain. If the gate voltage is increased, the amount of current allowed to pass between the source and the drain increases. On the other hand, if the gate voltage is decreased, the amount of current allowed to pass between the source and the drain decreases.

The IPS03N03LB G MOSFET is widely used in the consumer electronics industry, where they are incorporated into various devices to control the current flow through them. They are also used in the automotive sector, where they are used to control the flow of electricity to lights, motors and switches. The MOSFETs are also commonly used for power supply, defibrillators, modern lighting systems and solid-state switch control.

The most common applications of the IPS03N03LB G MOSFET are in high-voltage and high-speed switching applications. It is also used for digital switching applications, as the low-charge injection characteristics of this transistor allow for more reliable and efficient operation. This makes the IPS03N03LB G MOSFET an ideal choice for digital power supplies, defibrillators and modern lighting systems.

The specific data is subject to PDF, and the above content is for reference

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