IPS06N03LA G

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The IPS06N03LA G is a power MOSFET (metal oxide semiconductor field effect transistor) which is a type of semiconductor device used in the field of electrical engineering. It belongs to the family of single N-channel enhancement mode Field-Effect Transistors (FETs) and is made out of Silicon. It is widely used in a range of applications, including power conversion, switching, and in high-gain linear amplification.

The IPS06N03LA G is a N-Channel enhancement Power MOSFET which is designed for high-side applications. It is primarily used for operations that require high-voltage and/or high-current such as in AC-DC Power Supplies, DC-DC conversion, motor drive amplification and load switching. The MOSFET can switch at a high frequency with fast rise and fall times, and handle a significant amount of power. The device has a gate capacitance which helps to reduce power supply noise.

The IPS06N03LA G is designed with a maximum drain-source voltage rating of 60V, a maximum drain current of 6A and a maximum power dissipation of 12W. It has a threshold voltage of -2V to 6V and a drain-source on resistance of 0.06 ohms. The device can handle a maximum gate-source voltage of ± 20V and has an input capacitance of 250pF.

The IPS06N03LA G has a standard LMOS (Low-Side MOSFET) gate structure and a gate voltage threshold that is less than 5V making it suitable for both low and high side MOSFET applications. In addition, it has a high degree of input voltage immunity and high output impedance making it ideal for high-voltage, high-current applications. The device is capable of operating up to a maximum junction temperature of 175°C and has an operating temperature range of -55°C to 175°C.

The working principle behind the IPS06N03LA G MOSFETs is to allow the current to pass freely through the device when the gate voltage is high, and block the current when the gate voltage is low. This can be utilised in circuits to control the voltage or current to adjust power. When the gate voltage is applied, the conductivity between the drain and the source increases, allowing charge carriers to pass through the channel and creating a boost in power. This allows an amplified output of voltage or current which is perfect for high-side applications.

Overall, the IPS06N03LA G is a very powerful and efficient single N-Channel MOSFET which is perfect for applications that require high-voltage and/or high-current. It can also be used to control the voltage or current in circuits to adjust power. It is designed with a maximum drain-source voltage rating of 60V, a maximum drain current of 6A and a maximum power dissipation of 12W. The device has a threshold voltage of -2V to 6V, drain-source on resistance of 0.06 ohms, a maximum gate-source voltage of ±20V and has an input capacitance of 250pF. The IPS06N03LA G is an ideal choice for high-side applications.

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