Allicdata Part #: | IPS040N03LGAKMA1-ND |
Manufacturer Part#: |
IPS040N03LGAKMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 90A TO251-3 |
More Detail: | N-Channel 30V 90A (Tc) 79W (Tc) Through Hole PG-TO... |
DataSheet: | IPS040N03LGAKMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPS040N03LGAKMA1 is a silicon N-channel enhancement mode Field Effect Transistor (FET). This is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is rated for up to 40 volts and 4 amperes. It has a mounting type of surface mount and comes in a TO-252AA package.
The IPS040N03LGAKMA1 has many application fields, but is mainly used as a power switch in various types of electronic circuits. This includes, but is not limited to, switching power supplies, motor control, battery management, and industrial and automotive applications. The device can also be used as an amplifier or in low-noise pre-amplifier applications thanks to its low threshold voltage (VGSth) and fast switching capability.
The IPS040N03LGAKMA1 works by allowing current to flow from the source (S) to the drain (D), when the gate voltage (VGS) is above the threshold voltage (VGSth). The gate voltage increases the number of electrons attracted to the gate, which in turn increases the current flowing from the source to the drain. The amount of current flow is dependent on the voltage applied between the gate and the source. When there is no gate voltage, or a small gate voltage, the current flow is very small or nonexistent.
The IPS040N03LGAKMA1 has an on-state resistance (Rds) of just 0.030 ohms, which ensures the device can produce higher currents while maintaining low power losses. It also has a maximum drain-source voltage (VDS) of 40 volts, which means it can be used in high voltage applications.
The IPS040N03LGAKMA1 is suitable for a wide range of power switching applications, due to its low on-state resistance (Rds), high current flow capability, and low power losses. It is a good choice for automotive and industrial applications, where high currents and low power dissipation are required.
Insummary, the IPS040N03LGAKMA1 is a single enhancement mode MOSFET which has a low on-state resistance (Rds) and a high current flow capability, which makes it suitable for many power switching and low-noise pre-amplifier applications. It has a wide range of applications, such as automotive and industrial applications, thanks to its high drain-source voltage (VDS) and fast switching characteristics.
The specific data is subject to PDF, and the above content is for reference
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IPS040N03LGBKMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 90A TO251... |
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