IPS075N03LGAKMA1

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The IPS075N03LGAKMA1 is a logic level N-channel enhancement mode Field Effect Transistor (FET) that is commonly used in power management, solar power supply, LED lighting, battery-powered devices and switching power supplies. This transistor offers a low gate-source threshold voltage, making it suitable for low voltage applications. The IPS075N03LGAKMA1 is a single FET and is offered in an 8-lead plastic land grid array (LGA) package.

The working principle of the IPS075N03LGAKMA1 is relatively simple. The FET has a gate, a source and a drain. When the voltage applied to the gate-to-source terminal is higher than its threshold voltage (Vt), current will start flowing through the device from the source to the drain. By controlling the voltage on the gate, current can be turned on and off, providing efficient switching capabilities.

The IPS075N03LGAKMA1 is designed to be used in power management applications and offers a number of features that make it ideal for this purpose. It has a low on-state resistance, making it capable of handling high currents without losing efficiency. The low gate drive voltage makes it suitable for low voltage applications, while the low threshold voltage makes it ideal for low gate drives. Additionally, the low total gate charge and low gate to source capacitance makes it more suitable for switching applications.

The IPS075N03LGAKMA1 also offers very low power consumption and has been designed with lead-free production processes. This makes it one of the most efficient and environmentally friendly FETs available on the market today. It also meets standards such as RoHS and WEEE and is compliant with many international standards, making it suitable for global applications.

The IPS075N03LGAKMA1 can be found in a number of popular applications, such as laptop, tablet and phone chargers. It can also be used for digital camera and video recording circuits that require low power consumption. The low on-state resistance, coupled with the low gate drive voltage, makes it suitable for applications where low power consumption is desired. Additionally, the low threshold voltage makes it suitable for use in low-voltage applications.

Overall, the IPS075N03LGAKMA1 is a powerful and efficient FET that is perfect for applications requiring low power consumption and efficient switching capabilities. Its low gate drive voltage and low threshold voltage make it suitable for low voltage applications and the low total gate charge and low gate to source capacitance make it more suitable for switching applications.

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