Allicdata Part #: | IPS09N03LBG-ND |
Manufacturer Part#: |
IPS09N03LB G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 50A IPAK |
More Detail: | N-Channel 30V 50A (Tc) 58W (Tc) Through Hole PG-TO... |
DataSheet: | IPS09N03LB G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
In the semiconductor industry, there is a type of transistor known as the IPS09N03LBG. This component is a single MOSFET, or Metal-Oxide-Semiconductor Field Effect Transistor, and is used in a wide range of applications.
MOSFETs are found in almost every electronic device today, from computers and smartphones to microwaves and cars. This component is capable of very high-speed operation and is less prone to damage from high voltages and currents than other components. The IPS09N03LBG transistor is a type of MOSFET that is designed specifically for low voltage and low power applications.
This component is designed to serve as a switch in low voltage electronics, such as a 3.3 or 5V circuit. It is ideal for systems operating in the range of 5 - 40V and up to a few amps. The component can switch currents of up to 4A and has an on resistance of 0.011 ohms, making it suitable for many low-voltage switching applications.
The IPS09N03LBG MOSFET is an enhancement-type device and it is normally in an off state. In order to activate it and turn it on, a small voltage is applied to the gate terminal, which causes electrons to move from the source to the drain. This creates an inversion layer in the channel of the transistor which enables current to flow from the source to the drain, thus turning the component on.
The component can be used in a wide range of applications, such as switching power supplies, motor control, and in low-voltage digital circuits. It is also commonly used in Arduino-based projects due to its extremely low power consumption and high speed operation. Its small size and low cost make it an ideal component for a variety of projects.
In conclusion, the IPS09N03LBG is an excellent choice for low-voltage switching applications. It is capable of switching currents of up to 4A and has an on resistance of 0.011 ohms, making it an ideal component for projects requiring a combination of low power consumption, high speed, and low cost. The component is very popular in Arduino-based projects and is a must-have for anyone working with low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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