Allicdata Part #: | IPS04N03LAG-ND |
Manufacturer Part#: |
IPS04N03LA G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 50A IPAK |
More Detail: | N-Channel 25V 50A (Tc) 115W (Tc) Through Hole PG-T... |
DataSheet: | IPS04N03LA G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | OptiMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5199pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Stub Leads, IPak |
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IPS04N03LA G is a type of single P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is a three-terminal, low-voltage interface device used to control the flow of current in a circuit. The source, gate and drain terminals allow the MOSFET to be controlled with varying amounts of voltage and current, thus allowing the level of current to be adjusted between the source and drain accordingly. This makes the MOSFET a versatile device that can be used in a variety of applications.
MOSFETs are especially suited for use in low-current applications, such as analog signal processing, audio amplification, and voltage control in low-voltage web switching. They can also be used for power management, as well as pulse-width modulation and frequency control in radio-frequency and switching power supplies. Additionally, due to their device characteristics, MOSFETs are commonly used as pull-up and pull-down resistors in digital circuits.
The IPS04N03LA G is a type of P-channel MOSFET, which means that when it is connected to the power source, the voltage will flow from the source terminal to the drain terminal. This type of device has a high input impedance and a low output impedance, making it ideal for applications that require high-compatibility with power sources, such as voltage sensitive logic devices. Additionally, the IPS04N03LA G has a low on-resistance, which means it can switch with low loss. This makes it suitable for high-frequency applications such as switching power supplies.
The IPS04N03LA G is a common source MOSFET, which means that the source terminal is connected to the gate, allowing the current to flow between the source and the drain. The amount of current that flows between the source and the drain is determined by the voltage applied to the gate, which can be manipulated using a resistor and a gate driver, such as an op-amp or transistor. This allows the MOSFET to be used to amplify the input signal, providing control over the drain current.
The IPS04N03LA G is typically utilized in applications such as electronic power switching, voltage-level shifting, and current limitation. It can also be used for pulse-width modulation, for example, in a switching power supply, as it can provide very fast switching speeds. Additionally, it can be used in voltage limiter and voltage regulator applications.
In summary, the IPS04N03LA G is a type of P-channel single MOSFET that is commonly used for low-voltage switching applications, such as analog signal processing, audio amplification, and power management. It has a low on-resistance and a high input impedance, making it ideal for high-compatibility with power sources. Furthermore, it can be used for pulse-width modulation and current limitation applications, making it a versatile device.
The specific data is subject to PDF, and the above content is for reference
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