IPS04N03LB G

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IPS04N03LB G, part of the 40V NX Series of Power MOSFETs manufactured by IXYS, is a sensitive gate N-channel MOSFET designed to minimize conduction losses in high efficiency power management designs. With low on-state resistance (RDS(on)) values and low gate threshold drive, these devices are optimized for switching power in a variety of applications such as intelligent motor control, digital power supply inverters, DC-DC converters, automotive power systems, and lighting control.

The basic construction of the IPS04N03LB G consists of four major parts. At the very center is the gate, which is a metal-oxide semiconductor field-effect transistor (MOSFET). This is followed by three terminals – the source, drain, and gate terminals. The source and drain terminals are connected to the external circuit on either side and the gate terminal is connected to the control input. The operation of the MOSFET is based on the accumulation of electrons in an insulated gate region which is induced by a voltage applied to the gate terminal.

The IPS04N03LB G is suitable for applications requiring a fast switching time and low conduction losses. The interconnections between the source and drain terminals are optimized to provide superior RDS(on) values and high-frequency performance. The device also features a maximum junction temperature of +150°C and a maximum power dissipation of 2W.

The working principle of the IPS04N03LB G is fairly straightforward. A voltage applied to the gate terminal induces an electric field that attracts electrons from the source and prevents electrons from leaving the drain. This creates an electric current from the source to the drain and creates a low-resistance channel, or channel with a very low RDS(on) value. When there is no longer a voltage applied to the gate terminal, the attraction of electrons is cancelled, the current is interrupted and the channel closes. This results in a high RDS(on) value, which prevents power loss through the device.

The IPS04N03LB G can be used in a variety of power-management applications such as motor control, digital power supply inverters, DC-DC converters, automotive power systems, and lighting control. It is particularly advantageous in motor control due to its fast switching time and low conduction losses. It can also be used in systems with higher voltage requirements due to its wide operational temperature range and high power dissipation.

In summary, IPS04N03LB G is a sensitive gate N-channel MOSFET manufactured by IXYS that is optimized for switching power in various applications. Its gate, source, and drain terminals are optimized for superior RDS(on) values and high-frequency performance. It is well-suited for applications such as motor control, digital power supply inverters, DC-DC converters, automotive power systems, and lighting control because of its fast switching time and low conduction losses.

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