IPS05N03LB G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPS05N03LB G is a single N-channel Enhancement-Mode MosFet constructed with a monolithic structure. It has an advanced, low on-resistance design, making it suitable for a variety of high voltage applications, including motor control, high current switching, and control circuits. It is designed to provide the best combination of performance, speed, and cost.

Features

The IPS05N03LB G features a number of features that make it an ideal choice for a variety of applications. It is capable of handling up to 20A of continuous drain current with a Vds of 20V. It has a maximum drain-source voltage of 30V and a fast switching speed, making it ideal for switching high-current applications. Additionally, it has a low gate threshold voltage, allowing for precise control of the switches. The metal-oxide semiconductor structure provides excellent temperature stability, making it suitable for use in a variety of environments.

Application Field

The IPS05N03LB G is suitable for a variety of high-voltage applications, such as motor control, switching, and control circuits. For motor control applications, the device can be used in high-power drives or to switch motors at high speeds. It is also suitable for switching applications such as power factor correction or current limiting circuits, as well as for controlling switching in industrial applications. The device’s fast switching speed makes it suitable for high-speed applications where accuracy and response time are critical.

Working Principle

The IPS05N03LB G is an enhancement-mode MOSFET, which means that it is ‘normally-off’ until a gate voltage is applied. The N-channel MOSFET has a drain, source, and gate terminal. When a positive voltage is applied to the gate terminal, a conductive channel is formed between the drain and source terminals. The width of the channel is determined by the voltage applied to the gate terminal, and therefore the current passing through the device. The device can be used as either a switching device in which the drain-source current is turned on and off, or as an amplifier in which an input voltage is transferred to an output voltage.

Conclusion

In conclusion, the IPS05N03LB G is a single N-channel Enhancement-Mode MOSFET with a low on-resistance construction, making it suitable for a variety of high voltage applications. It has a maximum drain-source voltage of 30V and a fast switching speed, making it ideal for switching high-current applications. Its metal-oxide semiconductor structure provides excellent temperature stability, making it suitable for use in a variety of environments.

The specific data is subject to PDF, and the above content is for reference