IPS06N03LZ G

IPS06N03LZ G Application Field and Working Principle

The IPS06N03LZG is a N-Channel MOSFET (metal oxide semiconductor field effect transistor), specifically designed to provide the application with improved and robust performance. This device operates in two major modes of switch and amplifier. This article elaborates on its application field, operating principle and device characteristics.

Application Field

The IPS06N03LZG was designed for use in automotive, battery, industrial and consumer electronics applications. It is suitable for driving insulated gate bipolar transistors (IGBTs), relays, motors and various other loads. Its essential feature is its built-in protection against over-voltage and over-current, which makes it inherently safer for use in higher voltage and current applications.

This device is mainly used in power conversion and inverter applications. Its integrated power dissipation capabilities allows it to be used in applications, like 5V DC-DC converters, 5V DC to 10V DC - 24V solar inverters, four channel motor control, motor driver MOSFET etc.

Moreover, this MOSFET also finds usage in applications involving audio and electrostatic discharge (ESD). In audio applications, it is used as the driver in operational amplifiers. In terms of ESD, it provides built-in protection against electrostatic shocks.

Working Principle

The IPS06N03LZG is constructed as an insulated gate bi-polar transistor (IGBT), where a MOS gate and a bipolar gate are layered on top of each other. The MOS gate provides the necessary control to the device, while the bipolar gate provides the necessary energy to turn on the device.

This device works on the principle of thermal excitation by exploiting the energy from the junction temperature. The IPS06N03LZG draws its current from a source and then uses it to provide the necessary energy for the device to turn on. The source voltage drives the device until the threshold voltage is reached, at which point the device will start conducting. Conducting current is then determined by the current through the drain.

When the desired current is reached, the device will turn off automatically due to the inherent capability of the device. This happens because the power that is being dissipated by the device increases with the increase in current and it is rapidly turning off before harmful overload can occur.

Device Characteristics

The IPS06N03LZG comes with a maximum source-drain voltage of 30V and a maximum on-state drain current of 3.2A. It can also handle a maximum power dissipation of 1W at a case temperature of 25°C. In terms of environmental characteristics, the device can handle a junction temperature range of -40°C to 150°C.

This N-channel MOSFET is built with a two-pin gate-cathode configuration. It is also non-polar, which means that it can be used in both AC and DC applications. It has a high input impedance of 10M ohms, making it ideal for high-frequency switching applications. It comes in TO-220LZ and DPAK-4 packages.

Conclusion

In conclusion, the IPS06N03LZG is an ideal N-Channel MOSFET for automotive, audio, consumer electronics, industrial and solar applications. It can handle a maximum source-drain voltage of 30V and a maximum on-state drain current of 3.2A. With its built-in protection against over-voltage and over-current, it is suitable for higher voltage and current applications. It comes in two packages and works on the principle of thermal excitation.