IPW60R040C7XKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R040C7XKSA1-ND

Manufacturer Part#:

IPW60R040C7XKSA1

Price: $ 8.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 50A TO247-3
More Detail: N-Channel 600V 50A (Tc) 227W (Tc) Through Hole PG-...
DataSheet: IPW60R040C7XKSA1 datasheetIPW60R040C7XKSA1 Datasheet/PDF
Quantity: 1036
1 +: $ 8.06400
10 +: $ 7.82208
100 +: $ 7.66080
1000 +: $ 7.49952
10000 +: $ 7.25760
Stock 1036Can Ship Immediately
$ 8.06
Specifications
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Series: CoolMOS™ C7
Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPW60R040C7XKSA1 chip is a power field-effect transistor (FET) supported by both a through-hole and surface-mount package, for electrical systems requiring reliability and stability in extreme power and temperature conditions. This FET has a single-die construction with a three-terminal cell and is a variation on the high-density, power-MOSFET platform developed by International Rectifier. This technology provides an industry-leading low gate charge and extremely low on-resistance, while still delivering excellent power efficiency, extremely fast switching and high reliability.

The IPW60R040C7XKSA1 chip is an n-channel, single-die power MOSFET technology, operating in enhancement mode and working by transforming a small voltage and current applied to the gate into a higher voltage and current supplied at the drain terminal. This technology relies on a MOSFET’s electric field to form an electric barrier between the source and drain terminals, preventing current from flowing until the gate voltage becomes great enough to surpass the barrier, allowing current to flow. This type of transistor can switch on and off extremely quickly due to its low on-resistance, allowing for more efficient power management within an application.

The IPW60R040C7XKSA1 is suitable for applications related to intelligent transportation systems including automobiles, buses, trains, and ships, industrial systems, computer systems, and consumer electronics due to its ability to withstand extreme power and temperature conditions. Since this FET utilizes a single-die construction, peak efficiency can be achieved in applications that require extremely fast switching and low EMI interference such as high-speed USB 3.1 ports, lighting systems, motor drives, power converters, and other power semiconductor applications.

The IPW60R040C7XKSA1 chip offers a wide range of benefits, including improved dynamic load-management capability that ensures fast switching speed, low on-resistance, and low gate charge that improves the overall power efficiency of the application. Additionally, this FET features an optimized gate charge and low gate-voltage threshold, providing faster switching speeds and lower noise levels. This FET also has a high current handling and switching capability, allowing for reliable and consistent on/off control for increased system performance. The robust thermal and electrical design of this chip also helps to protect against EMI interference, ensuring a safe and reliable system. The IPW60R040C7XKSA1 chip is also RoHS-compliant, making it an environmentally friendly choice for industrial and consumer applications.

The IPW60R040C7XKSA1 chip from International Rectifier is a high-performance, low-power, single-die FET that is designed to provide exceptional system reliability, fast switching speeds, and improved power efficiency for a variety of applications. This FET provides an optimized gate charge and low gate-voltage threshold for improved system performance, low on-resistance for better power efficiency, and improved thermal and electrical design for increased EMI protection. Furthermore, it is RoHS-compliant, making it an eco-friendly and cost-effective choice for a variety of industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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