IPW60R070C6FKSA1

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IPW60R070C6FKSA1 is a high-efficiency, low-valued N-channel power MOSFET. It is designed for applications that require high current and cost-effective power devices such as switch-mode power supplies and motor control. The device has a truly ON-state resistance of just 0.05Ω, resulting in less power losses and improved efficiency. The N-channel power MOSFET is an insulated-gate type FET (IGFET) in which terminal charges are actively controlled by its gate-source voltage.

When applying a positive gate-source voltage, which is otherwise termed as "gate drive", voltage applied to the gate caused by the presence of the positive charge will create an electric field under the gate oxide, which further results in the drift and diffusion of electrons or holes to the inversion layer beneath the gate. This process is known as conducting channel formation. The possible current flow is controlled by adjusting the gate voltage, which modulates the thickness of charge carriers between the source and the drain region. Upon the removal of positive gate-source voltage, the electric field between the source and the drain junction is reduced, which causes the conducting channel to be removed and releasing the extra charge carriers out of the inversion layer. This process is known as channel cutoff.

The IPW60R070C6FKSA1 has a BVDSS rating of 60V, continuous drain current rating of 120A, RDS(on) of 0.02 Ohm containing lead-free terminals and an operating junction temperature between -55°C~175°C. It is suitable for various load switching, motor controlling applications and other applications that require superior power handling capabilities. By reducing its total consumption, especially in higher frequency switching applications, the IPW60R070C6FKSA1 is capable of providing higher efficiency. The design also offers low ON-state resistance (RDS ON) which results in lower gate voltage for the same current level.

The IPW60R070C6FKSA1 also features Kelvin source connection which is capable of reducing the effective source inductance and improve switching performance. Its power dissipation capability is improved by the use of a Heat-Home Plate (HHP-T) structure to reduce Whisker-dependent hotspot temperature. This N-channel power MOSFET is also highly robust and offers superior ESD (Electro-Static Discharge) protection.

In summary, the IPW60R070C6FKSA1 is a low-valued and high-efficieny N-channel power MOSFET that is ideal for applications requiring high current and cost-effective power devices. By reducing its total power consumption and offering low ON-state resistance and superior ESD protection, the device is capable of providing higher efficiency and superior power handling capabilities for a wide range of applications. Furthermore, its Kelvin source connection improves switching performance and the use of Heat-Home Plate structure prevents any losses due to hotspot temperatures.

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