IPW60R055CFD7XKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors, particularly field-effect transistors (FETs), have been instrumental in the development of complex electronic equipment since their invention in the 1940s. FETs are more efficient and reliable than the older bipolar transistors and are used in the majority of integrated circuits and other hardware today. One particular type of FET is the metal oxide semiconductor field-effect transistor (MOSFET), which is the most widely used type of transistor in modern electronics due to its high input impedance, low power consumption, and effective switching. The IPW60R055CFD7XKSA1 is a single MOSFET that is used for a variety of applications, depending on the characteristics of the device.

About the IPW60R055CFD7XKSA1

The IPW60R055CFD7XKSA1 is a high-power single MOSFET device manufactured by Infineon Technologies. It is designed to be a “low-loss device”, meaning that it is designed to reduce energy losses and increase the efficiency of the circuit in which it is used. It is made up of a single MOSFET with a chip-scale package, providing a space-saving solution for high-performance applications. It features a low profile and low gate charge, allowing for fast switching and improved efficiency.

Application fields of the IPW60R055CFD7XKSA1

The IPW60R055CFD7XKSA1 is a high-performance MOSFET that is suitable for a variety of applications, such as consumer electronics, automotive, power supply and industrial motor control, telecommunications, and healthcare. More specifically, the device is used for motor control and other applications in which power must be switched off and on quickly, such as switching power amplifiers. It is also designed to be used as part of a system, being well suited for use in power systems with a wide variation of voltages and frequencies.

Working Principle of the IPW60R055CFD7XKSA1

The IPW60R055CFD7XKSA1 is a single MOSFET device that uses a field-effect to control electric current flow. This means that a small electric charge is applied to the gate of the device, which establishes or modifies the electric field (“gate-induced electric field”). This field either allows or prevents current from flowing through the device. The electric field is established using an insulated gate contact, which is connected to the gate of the device and provides a pathway for the charge. By varying the amount of charge applied, the gate-induced electric field can be adjusted, allowing the device to be turned on or off.

The IPW60R055CFD7XKSA1 is a high-speed device and comes with a variety of features to make it suitable for switching power supply applications. It has an extrabright power dissipation capability (XT), a high frequency capability (HF), and a low-noise output (LN) with low gate resistance. The device is also designed to be highly reliable, with a maximum junction temperature rating of 150°C and a total power dissipation of 55W.

Conclusion

In conclusion, the IPW60R055CFD7XKSA1 is a single MOSFET device designed for a variety of applications. It is designed with a low profile and low gate charge, allowing for fast switching and improved efficiency. It is suitable for motor control and other applications in which power needs to be switched off and on quickly. The device is also designed to be reliable, with a maximum junction temperature rating of 150°C and a total power dissipation of 55W.

The specific data is subject to PDF, and the above content is for reference