IPW60R099CPAFKSA1

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The IPW60R099CPAFKSA1 is a single N-channel metal oxide semiconductor field effect transistor (MOSFET). It is renowned for its high efficiency and low power consumption. This transistor is suitable for a wide range of applications, from power conversion and boosting to switching circuits.

The IPW60R099CPAFKSA1 is an enhanced version of the regular N-channel MOSFET and is able to handle a greater load than other transistors. It has an on-state resistance of 60 mΩ and a threshold voltage of 2.5 V. This makes it suitable for use in high frequency switching circuits and power conversion.

The IPW60R099CPAFKSA1 is also able to handle higher voltages than regular MOSFETs, making it the ideal choice for applications where large currents are required. The Gate-source voltage of this transistor is 20 V, while its Drain-source voltage is 40 V. The maximum drain current of this MOSFET is 3A, making it suitable for a wide range of power management applications.

The IPW60R099CPAFKSA1 comes with a wide range of features to provide additional protection, such as a reverse bias drain-source breakdown voltage of 200 V, and an off-state drain-source voltage of -20 V.

The working principle of the IPW60R099CPAFKSA1 is based on that of any other MOSFET. When a positive voltage is applied to the Gate-source terminals, the resistance of the channel decreases. This allows current to flow from the drain to the source, enabling power conversion and boosting operation.

When no voltage is applied to the Gate-source terminals, the channel resistance increases and the current flow is blocked, which effectively turns the device off. This makes the IPW60R099CPAFKSA1 an excellent choice for applications where power is constantly being switched on and off.

The IPW60R099CPAFKSA1 is an excellent choice for a wide range of applications, from power conversion and boosting to switching circuits. Thanks to its high efficiency and low power consumption, it is an ideal device for designers and engineers looking to create high performance applications.

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