Allicdata Part #: | IPW65R080CFDFKSA1-ND |
Manufacturer Part#: |
IPW65R080CFDFKSA1 |
Price: | $ 6.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 700V 43.3A TO247 |
More Detail: | N-Channel 700V 43.3A (Tc) 391W (Tc) Through Hole P... |
DataSheet: | IPW65R080CFDFKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 6.10470 |
10 +: | $ 5.49171 |
240 +: | $ 4.51529 |
720 +: | $ 3.78308 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.76mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 391W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5030pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 17.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43.3A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPW65R080CFDFKSA1 is a single N-Channel enhancement mode power field-effect transistor for enhanced low side switching applications. As a switching device, it can be used in circuit applications that demand low-side switching as well as superior thermal performance and Improved safe operating area (SOA). Designed in a standard TO-220F package with PowerPAD technology, this transistor provides excellent relay replacement and a variety of applications such as solenoid drain control, air bag deployment, fuel pump control, and DC relay drivers. It is also a great choice for car audio system.
The IPW65R080CFDFKSA1 is a highly reliable and efficient N-Channel MOSFET. It is capable of handling an Rds(on) of 18mΩ (@ 4.5V, 10A) and features a 150°C maximum junction temperature for improved thermal performance. The single-pole device is designed to operate from a 12V gate drive and will draw minimal current from the gate when in the on-state. This makes the device ideal for automotive applications, as it does not require any external components for gate drive.
The working principle of the IPW65R080CFDFKSA1 involves the movement of negative electrons from the source terminal of the transistor to the drain, through a thin silicon layer called the gate, when a positive charge is applied to the gate electrode. These negatively charged electrons form an electric field which repels further electrons from the source and causes them to move towards the drain terminal, creating an on-state. When the gate voltage is reversed, the electric field collapses and the electrons quickly return to their original position, resulting in an off-state.
Furthermore, the IPW65R080CFDFKSA1 offers superior current-handling performance and a low gate charge. Its high operation frequency and low threshold voltage also contribute to its efficient and dependable switching capabilities. Besides automotive applications, this transistor may also be used in other power-related fields and applications, such as industrial lighting and power management.
In conclusion, the IPW65R080CFDFKSA1 is an ideal choice for low side switching applications. Its high voltage and current efficiency, coupled with its excellent thermal performance, make it suitable for a wide range of applications, including automotive, industrial lighting, and power management.
The specific data is subject to PDF, and the above content is for reference
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IPW60R250CP | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 12A TO-2... |
IPW65R045C7300XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V TO-247-3... |
IPW60R070CFD7XKSA1 | Infineon Tec... | 6.03 $ | 1000 | MOSFET N-CH 600V TO247-3N... |
IPW65R080CFDFKSA1 | Infineon Tec... | 6.71 $ | 1000 | MOSFET N-CH 700V 43.3A TO... |
IPW60R070C6FKSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 600V 53A TO24... |
IPW65R045C7FKSA1 | Infineon Tec... | 8.86 $ | 1000 | MOSFET N-CH 650V 46A TO-2... |
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