IPW60R280C6FKSA1

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IPW60R280C6FKSA1 is a part of a family of components from Infineon Technologies that are used for power management in a variety of applications. Its main features are a low gate capacitance RDS(ON), and high efficiency under high-frequency operations. The IPW60R280C6FKSA1 is a single-channel logic-level gate charge optimized MOSFET. This device has an integrated parasitic Schottky diode and a 2.8-A drain current rating.

These MOSFETs are used in a wide range of applications that require high efficiency and thermal management. The most common applications that take advantage of the IPW60R280C6FKSA1’s features include power supply systems, input and output converters, DC/DC converters, lighting systems, motor speed controls, AC/DC converter power stages, and power charging systems.

The working principle of the IPW60R280C6FKSA1 is based on the transfer of carriers from the source to the drain. A voltage is applied to the gate terminal to control the flow of electrons from the source to the drain. When the gate voltage exceeds a certain threshold, the MOSFET is turned on and an inversion layer is formed at the surface of the semiconductor between the source and drain. As the gap between the source and drain gets smaller, the electrons are drawn towards the drain, carrying an electric charge with them.

The IPW60R280C6FKSA1 also has a built-in Schottky diode that protects the circuit from over powering and short-circuits. During over powering and short-circuiting, the diode will act as a short-circuit path and protect the device from damage. As the gate voltage increases, the MOSFET will turn on and the diode will turn off, allowing the device to operate within its maximum power rating.

One of the most important features of the IPW60R280C6FKSA1 is its low gate capacitance RDS(ON). This feature enables the MOSFET to be driven hard without becoming unstable due to current overshoot or ringing. This feature also reduces the possibility of electromagnetic interference and helps maintain a low power consumption.

In addition, the IPW60R280C6FKSA1 also has a high efficiency under high-frequency operations. The device has a gate threshold voltage of -1.8 V, which enables the device to switch at a faster speed than similar MOSFETs. This feature helps increase system efficiency by minimizing switching losses.

The IPW60R280C6FKSA1 is a great choice for applications that require high efficiency and thermal management. Its low gate capacitance RDS(ON), fast switching speed, and built-in Schottky diode make it an ideal choice for many power management applications.

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