IPW60R250CP Allicdata Electronics
Allicdata Part #:

IPW60R250CP-ND

Manufacturer Part#:

IPW60R250CP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 12A TO-247
More Detail: N-Channel 650V 12A (Tc) 104W (Tc) Through Hole PG-...
DataSheet: IPW60R250CP datasheetIPW60R250CP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPW60R250CP is a product of Infineon Technologies, which is a Field-effect transistor (FET). FETs are semiconductor devices which have one or more terminals controlled by voltage signals to control the current passing through other terminals. Specifically, IPW60R250CP is a N-Channel MOSFET. This article will provide an overview of the applications and working principle of the IPW60R250CP.

Applications of IPW60R250CP

The IPW60R250CP is used in a variety of applications, such as in power amplifier design, power supply circuits, automotive lighting control, and audio amplifier design. The device is also suitable for switching high currents and/or voltages. Its ability to switch high voltages and currents make it suitable for use in AC mains-driven applications such as line-powered lighting control and other power switching circuits. Furthermore, its built-in current limitation makes it perfect for use in motor control applications, where high current and voltage switching is required.

Working principle of IPW60R250CP

The IPW60R250CP is a N-Channel MOSFET and as such it consists of an insulated gate which is separated from the source and drain by an insulating layer of silicon dioxide. The control of the flow of current in an FET is done by varying the voltage on the gate. When a voltage is applied to the gate, electric charge accumulates under the gate which creates an inversion layer in the semiconductor material, thus allowing current to flow between the source and drain. As the voltage on the gate is increased, the current is also increased, with the maximum amount of current being determined by the size of the device. This can be used to control the amount of current passing through the device and therefore the amount of power it can provide.

The IPW60R250CP also has a built-in current limitation. This means that if the current passing through the device exceeds a certain threshold, the device will self-limit the current. This is done by increasing the voltage on the gate, thus reducing the current through the device. This allows the device to be used in motor control applications, where high current and voltage switching is required.

Overall, the IPW60R250CP is a versatile device suitable for a variety of applications. It is capable of switching high currents and voltages and its built-in current limitation makes it perfect for use in motor control applications. As such, it is an ideal choice for power switching, automotive lighting, and audio amplifier designs.

The specific data is subject to PDF, and the above content is for reference

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