IPW65R080CFDAFKSA1 Allicdata Electronics
Allicdata Part #:

IPW65R080CFDAFKSA1-ND

Manufacturer Part#:

IPW65R080CFDAFKSA1

Price: $ 9.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 700V 43.3A TO247
More Detail: N-Channel 650V 43.3A (Tc) 391W (Tc) Through Hole P...
DataSheet: IPW65R080CFDAFKSA1 datasheetIPW65R080CFDAFKSA1 Datasheet/PDF
Quantity: 960
1 +: $ 8.21520
10 +: $ 7.39116
240 +: $ 6.07730
Stock 960Can Ship Immediately
$ 9.04
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 391W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Series: Automotive, AEC-Q101, CoolMOS™
Rds On (Max) @ Id, Vgs: 80 mOhm @ 17.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPW65R080CFDAFKSA1 is a high power insulated-gate bipolar transistor (IGBT) suitable for high current switching and high frequency motor drive applications. This device consists of an N-channel enhancement-mode lateral MOSFET drive and a vertical power bipolar transistor resulting in significantly improved switching performance and higher energy efficiency.

Application Fields: This type of IGBT is widely used in the following applications: inverters, switching power supplies, motor drives, uninterruptible power supplies, etc. It is also suitable for welding motors, servo drives, brushless DC motors, actuators, and robotics.

Working Principle: IGBT can be thought of as a combination of a bipolar junction transistor (BJT) and a FET. When the gate-to-source voltage is equal to zero, the transistor effectively shuts off and no current flows in the channel between the source and the drain. When a positive gate-to-source voltage is applied, the source and drain channel are “polarized”, resulting in an enhanced-mode depletion MOSFET. This allows for the conduction of current between the source and drain, and a high current flow is possible if the voltage is high enough.

Due to the combination of an N-channel MOSFET and power bipolar transistor in the same package, the IPW65R080CFDAFKSA1 offers superior switching performance and higher efficiencies, making it an ideal choice for high current, high frequency switching and motor drive applications. This device features low output capacitance, low noise, low conduction loss and low switching loss. It also offers fast switching speed and improved thermal performance. The device is available in a TO-220 or TO-264 case styles and can be used in a wide range of operating voltages.

In summary, the IPW65R080CFDAFKSA1 is an ideal choice for high current, high frequency switching and motor drive applications due to its superior switching performance, faster switching speed, and improved thermal performance. It is widely used in a wide range of applications such as inverters, switching power supplies, motor drives, uninterruptible power supplies, welding motors, servo drives, brushless DC motors, actuators, and robotics.

The specific data is subject to PDF, and the above content is for reference

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