Allicdata Part #: | IPW60R037P7XKSA1-ND |
Manufacturer Part#: |
IPW60R037P7XKSA1 |
Price: | $ 8.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 76A TO247-3 |
More Detail: | N-Channel 650V 76A (Tc) 255W (Tc) Through Hole PG-... |
DataSheet: | IPW60R037P7XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 7.81200 |
10 +: | $ 7.02954 |
240 +: | $ 5.77989 |
Vgs(th) (Max) @ Id: | 4V @ 1.48mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 255W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5243pF @ 400V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 121nC @ 10V |
Series: | CoolMOS™ P7 |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 29.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPW60R037P7XKSA1 is an Infineon Power MOSFET with a logic level zero gate threshold voltage. This makes it ideal for a wide range of applications, such as in motor control, converters, power supplies, and motor drives. This Power MOSFET has many advantages that make it the perfect choice for applications requiring high reliability, performance and energy efficiency.
The IPW60R037P7XKSA1 is a single N-channel Power MOSFET, with a maximum drain source voltage of 30V, 900mA drain current @10V and 2.7V gate threshold voltage. It has a maximum total gate charge of 221nC, a maximum avalanche energy of 106mJ, a maximum dv/dt of 6000V/μs and a maximum junction temperature of 150°C. It also has a fast switching speed, with a maximum rise time of 80ns and a maximum fall time of 15ns.
The IPW60R037P7XKSA1 has the unique feature of allowing the use of significantly lower gate voltage thresholds, allowing for easier and lower power control of the drain current, with milliamps of current control. This Power MOSFET is capable of providing high power dissipation and ruggedness over a wide temperature range under various load and operating conditions. It is suitable for high-speed switching applications and offers superior device reliability and performance.
The working principle of the IPW60R037P7XKSA1 is relatively simple. The MOSFET has a gate terminal which when driven with a suitable voltage, produces a voltage across the source and drain terminals that controls the current. The voltage applied at the gate will determine the voltage across the source and drain terminals, which will in turn control the current flowing between the two terminals. This is known as the transfer characteristic and is used to control the current in a circuit.
The IPW60R037P7XKSA1 is a popular choice for use in automotive, industrial and commercial applications for its low gate voltage threshold and capability to handle large power requirements. It is used to control power electronics, drive motors, and applications like switching power supplies for numerous applications.
In short, the IPW60R037P7XKSA1 is an excellent option for applications requiring low gate voltage threshold and the ability to handle large power requirements. It is well suited to applications like switching power supplies or motor control, and offers superior device reliability and performance. Its fast switching speeds, low gate voltage thresholds and relatively simple working principle make it the perfect choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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