IPW60R125CPFKSA1 Allicdata Electronics
Allicdata Part #:

IPW60R125CPFKSA1-ND

Manufacturer Part#:

IPW60R125CPFKSA1

Price: $ 5.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 25A TO-247
More Detail: N-Channel 600V 25A (Tc) 208W (Tc) Through Hole PG-...
DataSheet: IPW60R125CPFKSA1 datasheetIPW60R125CPFKSA1 Datasheet/PDF
Quantity: 158
1 +: $ 4.87620
10 +: $ 4.35330
240 +: $ 3.56990
720 +: $ 2.89073
1200 +: $ 2.43797
Stock 158Can Ship Immediately
$ 5.36
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPW60R125CPFKSA1 is a single N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). This device is designed using advanced power process technology which provides excellent on-state performance and helps offer reliable switching and dynamic dv/dt rating. This transistor is manufactured using the TO-263 package style and offers a maximum drain-source voltage of 600 volts. It is also equipped with a maximum drain current of 72 amperes and a total gate charge of 47 nano-coulombs.

This particular MOSFET transistor is primarily used in high-power, industrial and consumer power management applications, such as Li-ion battery charge pumps, DC/DC converters, LED lighting control, bus converters, and DC motor speed control. It can also be used in high-speed switching applications, and is capable of switching fast enough that it can be used to switch high-definition video signals.

The working principle of the IPW60R125CPFKSA1 transistor involves a gate electric field that controls current between its source and drain. A voltage applied to the gate will cause current to flow either from the source to the drain or in the opposite direction, depending on how much voltage applied. This allows for high-efficiency control of a load, by controlling the amount of current that available to the load, based on the voltage.

The IPW60R125CPFKSA1 transistor is manufactured using advanced process techniques to provide excellent on-state performance, making high-power applications possible. The device has a wide voltage range and high peak current ratings, making it ideal for applications that require controlling high power loads. The device can be used in both industrial and consumer power management applications, and provides reliable switching and dynamic dv/dt ratings.

In summary, the IPW60R125CPFKSA1 is a single N-channel MOSFET transistor that is primarily used in power management applications, such as Li-ion battery charge pumps, DC/DC converters, LED lighting control, bus converters, and DC motor speed control. The transistor works by using a gate electric field to control current between its source and drain. It is known for its excellent on-state performance, wide voltage range, and high peak current ratings, making it suitable for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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